Ferroelectric capacitors

Petraru, A, V Nagarajan, H Kohlstedt, Ramamoorthy Ramesh, D.G Schlom, and R Waser. "Simultaneous measurement of the piezoelectric and dielectric response of nanoscale ferroelectric capacitors by an atomic force microscopy based approach." Applied Physics A: Materials Science and Processing 84 (2006) 67–71.

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Prasertchoung, S, V Nagarajan, Z Ma, Ramamoorthy Ramesh, J.S Cross, and M Tsukada. "Polarization switching of submicron ferroelectric capacitors using an atomic force microscope." Applied Physics Letters 84 (2004) 3130–3132.

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Stanishevsky, A, B Nagaraj, J Melngailis, Ramamoorthy Ramesh, L Khriachtchev, and E McDaniel. "Radiation damage and its recovery in focused ion beam fabricated ferroelectric capacitors." Journal of Applied Physics 92 (2002) 3275–3278.

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Liu, B.T, K Maki, Y So, V Nagarajan, Ramamoorthy Ramesh, J Lettieri, J.H Haeni, D.G Schlom, W Tian, X.Q Pan, F.J Walker, and R.A McKee. "Epitaxial La-doped SrTiO3 on silicon: A conductive template for epitaxial ferroelectrics on silicon." Applied Physics Letters 80 (2002) 4801–4803.

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Liu, B.T, K Maki, S Aggarwal, B Nagaraj, V Nagarajan, L Salamanca-Riba, Ramamoorthy Ramesh, A.M Dhote, and O Auciello. "Low-temperature integration of lead-based ferroelectric capacitors on Si with diffusion barrier layer." Applied Physics Letters 80 (2002) 3599–3601.

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Aggarwal, S, B Nagaraj, I.G Jenkins, H Li, R.P Sharma, L Salamanca-Riba, Ramamoorthy Ramesh, A.M Dhote, A.R Krauss, and O Auciello. "Correlation between oxidation resistance and crystallinity of Ti-Al as a barrier layer for high-density memories." Acta Materialia 48 (2000) 3387–3394.

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Aggarwal, S, S.R Perusse, B Nagaraj, and Ramamoorthy Ramesh. "Oxide electrodes as barriers to hydrogen damage of Pb(Zr,Ti)O3-based ferroelectric capacitors." Applied Physics Letters 74 (1999) 3023–3025.

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Dhote, A.M, S Madhukar, D Young, T Venkatesan, Ramamoorthy Ramesh, C.M Cotell, and J.M Benedetto. "Low temperature growth and reliability of ferroelectric memory cell integrated on Si with conducting barrier stack." Journal of Materials Research 12 (1997) 1589–1594.

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Warren, W.L, G.E Pike, D Dimos, K Vanheusden, H.N Al-Shareef, B.A Tuttle, Ramamoorthy Ramesh, and J .T Jr. "Voltage shifts and defect-dipoles in ferroelectric capacitors." Proceedings of the Materials Research Society Symposium -. Vol. 433. Materials Research Society, Pittsburgh, PA, United States, 1996. 257–266.

Warren, W.L, B.A Tuttle, D Dimos, G.E Pike, H.N Al-Shareef, Ramamoorthy Ramesh, and J .T Jr. "Imprint in ferroelectric capacitors." Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 35 (1996) 1521–1524.

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