@article{33670,
  keywords = {sputtering, electric potential, hysteresis, atomic force microscopy, Polarization, Ferroelectric devices, Ferroelectric capacitors, Ferroelectric thin films, Capacitors, Resistors, electric conductivity, Polycrystalline materials, Noise levels, Polarization hysteresis, Switchable pulse polarization, Data reduction, Extrapolation, Reactive ion etching},
  author = {S Prasertchoung and V Nagarajan and Z Ma and Ramamoorthy Ramesh and J.S Cross and M Tsukada},
  title = {Polarization switching of submicron ferroelectric capacitors using an atomic force microscope},
  abstract = {The measurement of switchable pulse polarization of micron and submicron ferroelectric capacitors was discussed, using pulse switching and atomic force microscope (AFM). The measurement setup for pulsed probing to measure the switchable polarization of a submicron capacitor was a combination of a pulse generator, an AFM, a shunt resistor, and a digital sampling oscilloscope. The switchable polarization of discrete polycrystalline Pb(ZrTi)O 3 capacitors were obtained using fast square pulses with rise time on the order of tens of nanaoseconds. The results show that switchable polarization is independent of the pulse width within experimental error.},
  year = {2004},
  journal = {Applied Physics Letters},
  volume = {84},
  number = {16},
  pages = {3130-3132},
  issn = {00036951},
  doi = {10.1063/1.1707221},
  note = {cited By 13},
  language = {eng},
}