%0 Journal Article
%K transmission electron microscopy
%K Perovskite
%K pulse width
%K cobalt compounds
%K Ferroelectric materials
%K Epitaxial growth
%K ferroelectricity
%K Ferroelectric capacitors
%K Silicon wafers
%K Epitaxial ferroelectric
%K SrTiO
%K Low temperatures
%K Semiconducting silicon compounds
%K X ray diffraction analysis
%K Capacitive couplings
%K Electrical response
%K Ferroelectric layers
%K Perovskite layers
%K PZT
%K Silicon substrates
%K Template layers
%K TiO
%K Sol-gel process
%A B.T Liu
%A K Maki
%A Y So
%A V Nagarajan
%A Ramamoorthy Ramesh
%A J Lettieri
%A J.H Haeni
%A D.G Schlom
%A W Tian
%A X.Q Pan
%A F.J Walker
%A R.A McKee
%B Applied Physics Letters
%D 2002
%G eng
%P 4801-4803
%R 10.1063/1.1484552
%T Epitaxial La-doped SrTiO3 on silicon: A conductive template for epitaxial ferroelectrics on silicon
%V 80
%X Use of an epitaxial conducting template has enabled the integration of epitaxial ferroelectric perovskites on silicon. The conducting template layer, LaxSr1-xTiO3 (LSTO), deposited onto (001) silicon wafers by molecular-beam epitaxy is then used to seed 001-oriented epitaxial perovskite layers. We illustrate the viability of this approach using PbZr0.4Ti0.6O3 (PZT) as the ferroelectric layer contacted with conducting perovskite La0.5Sr0.5CoO 3 (LSCO) electrodes. An important innovation that further facilitates this approach is the use of a low-temperature (450°C) sol-gel process to crystallize the entire ferroelectric stack. Both transmission electron microscopy and x-ray diffraction analysis indicate the LSCO/PZT/LSCO/LSTO/Si heterostructures are epitaxial. The electrical response of ferroelectric capacitors (for pulse widths down to 1 μs) measured via the underlying silicon substrate is identical to measurements made using conventional capacitive coupling method, indicating the viability of this approach. © 2002 American Institute of Physics.