%0 Journal Article
%K Thin films
%K Defects
%K Polarization
%K Ferroelectric materials
%K Doping (additives)
%K Ferroelectric devices
%K Lead compounds
%K Ferroelectric capacitors
%K Capacitors
%K Composition effects
%K Compositional dependent oxygen vacancy density
%K Ferroelectric memory devices
%K Imprint
%K Oxygen vacancy related defect dipole
%K Polarization voltage characteristics
%K Stress-induced voltage shift
%K Thermal induced voltage shift
%K Voltage offset
%A W.L Warren
%A B.A Tuttle
%A D Dimos
%A G.E Pike
%A H.N Al-Shareef
%A Ramamoorthy Ramesh
%A J .T Jr
%B Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
%D 1996
%G eng
%P 1521-1524
%T Imprint in ferroelectric capacitors
%V 35
%X We show that voltage offsets in the polarization-voltage characteristics of Pb(Zr, Ti)O3 capacitors can lead to imprint in ferroelectric memory devices. The thermal-induced voltage shifts (internal bias field) are in part attributed to the role of oxygen vacancy-related defect dipoles throughout the film. In support of this, it is found that donor doping at the Ti(Zr) sites reduces the thermally-induced voltage shifts. The stress-induced voltage shifts are found to be dependent on the Zr/Ti cation ratio. This compositional dependence is explained by considering the role of deep bulk Ti3+ centers and/or a compositional dependent oxygen vacancy density.