Ferroelectric capacitors

Aggarwal, S, B Nagaraj, I.G Jenkins, H Li, R.P Sharma, L Salamanca-Riba, Ramamoorthy Ramesh, A.M Dhote, A.R Krauss, and O Auciello. "Correlation between oxidation resistance and crystallinity of Ti-Al as a barrier layer for high-density memories." Acta Materialia 48 (2000) 3387–3394.

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Aggarwal, S, S.R Perusse, B Nagaraj, and Ramamoorthy Ramesh. "Oxide electrodes as barriers to hydrogen damage of Pb(Zr,Ti)O3-based ferroelectric capacitors." Applied Physics Letters 74 (1999) 3023–3025.

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Dhote, A.M, S Madhukar, D Young, T Venkatesan, Ramamoorthy Ramesh, C.M Cotell, and J.M Benedetto. "Low temperature growth and reliability of ferroelectric memory cell integrated on Si with conducting barrier stack." Journal of Materials Research 12 (1997) 1589–1594.

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Warren, W.L, G.E Pike, D Dimos, K Vanheusden, H.N Al-Shareef, B.A Tuttle, Ramamoorthy Ramesh, and J .T Jr. "Voltage shifts and defect-dipoles in ferroelectric capacitors." Proceedings of the Materials Research Society Symposium -. Vol. 433. Materials Research Society, Pittsburgh, PA, United States, 1996. 257–266.

Warren, W.L, B.A Tuttle, D Dimos, G.E Pike, H.N Al-Shareef, Ramamoorthy Ramesh, and J .T Jr. "Imprint in ferroelectric capacitors." Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 35 (1996) 1521–1524.

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Auciello, O, and Ramamoorthy Ramesh. "Laser-ablation deposition and characterization of ferroelectric capacitors for nonvolatile memories." MRS Bulletin 21 (1996) 31–36.

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Wei, W, A.M Dhote, Ramamoorthy Ramesh, and S Sauvage. "Reliability studies of polycrystalline La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O capacitors on silicon." Integrated Ferroelectrics 12 (1996) 53–62.

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