A.M Dhote
Publications
Viewing 17 of 17 publications
2002
Development of materials integration strategies for electroceramic film-based devices via complementary in situ and ex situ studies of film growth and interface processes." Integrated Ferroelectrics. Vol. 46. 2002. 295–306.
, , , , , , , and . "Low-temperature integration of lead-based ferroelectric capacitors on Si with diffusion barrier layer." Applied Physics Letters 80 (2002) 3599–3601.
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Studies of thin film growth and oxidation processes for conductive Ti-Al diffusion barrier layers via in situ surface sensitive analytical techniques." Applied Physics Letters 79 (2001) 800–802.
, , , and . "Studies of ferroelectric film growth and capacitor interface processes via in situ analytical techniques and correlation with electrical properties." Integrated Ferroelectrics 32 (2001) 121–131.
, , , , , , , , and . "2000
Correlation between oxidation resistance and crystallinity of Ti-Al as a barrier layer for high-density memories." Acta Materialia 48 (2000) 3387–3394.
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Studies of metallic species incorporation during growth of SrBi2Ta2O9 films on YBa2Cu3O7-x substrates using mass spectroscopy of recoiled ions." Materials Research Society Symposium - Proceedings. Vol. 541. 1999. 281–286.
, , , , , , , and . "Pulsed laser-ablation deposition of thin films of molybdenum suicide and its properties as a conducting barrier for ferroelectric random-access memory technology." Journal of Materials Research 14 (1999) 940–947.
, , , , , , and . "Conducting barriers for vertical integration of ferroelectric capacitors on Si." Applied Physics Letters 74 (1999) 230–232.
, , , , and . "1998
Studies of metallic species and oxygen incorporation during sputter-deposition of SrBi2Ta2O9 films, using mass spectroscopy of recoiled ions." Applied Physics Letters 72 (1998) 2529–2531.
, , , , , , and . "Lead based ferroelectric capacitors for low voltage non-volatile memory applications." Integrated Ferroelectrics 19 (1998) 159–177.
, , , , , , , , and . "1997
La0.5Sr0.5CoO3/Pb(Nb0.04Zr 0.28Ti0.68)O3/La0.5Sr 0.5CoO3 thin film heterostructures on Si using TiN/Pt conducting barrier." Applied Physics Letters 71 (1997) 356–358.
, , , , , and . "Effect of oxygen stoichiometry on the electrical properties of La0.5Sr0.5CoO3 electrodes." Journal of Applied Physics 81 (1997) 3543–3547.
, , , , , , and . "Low temperature growth and reliability of ferroelectric memory cell integrated on Si with conducting barrier stack." Journal of Materials Research 12 (1997) 1589–1594.
, , , , , , and . "1996
Direct integration of ferroelectric La-Sr-Co-O/Pb-Nb-Zr-Ti-O/La-Sr-Co-O capacitors on silicon with conducting barrier layers." Applied Physics Letters 68 (1996) 1350–1352.
, , , , , and . "Hysteresis relaxation in (Pb,La)(Zr,Ti)O3 thin film capacitors with (La,Sr)CoO3 electrodes." Applied Physics Letters 69 (1996) 2540–2542.
, , , , , , , , and . "Reliability studies of polycrystalline La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O capacitors on silicon." Integrated Ferroelectrics 12 (1996) 53–62.
, , , and . "1995
Direct integration of ferroelectric La-Sr-Co-O/Pb-Nb-Zr-Ti-O/La-Sr-Co-O capacitors on silicon with conducting barrier layers." Applied Physics Letters (1995) 1350.
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