S Madhukar

Publications

Viewing 12 of 12 publications

1999

Friessnegg, T, B Nielsen, V.J Ghosh, A.R Moodenbaugh, S Madhukar, S Aggarwal, D.J Keeble, E.H Poindexter, P Mascher, and Ramamoorthy Ramesh. "Defect identification in (La, Sr)CoO3-δ using positron annihilation spectroscopy." Materials Research Society Symposium - Proceedings. Vol. 541. 1999. 161–165.

Aggarwal, S, S Madhukar, B Nagaraj, I.G Jenkins, Ramamoorthy Ramesh, L Boyer, and J .T Jr. "Can lead nonstoichiometry influence ferroelectric properties of Pb(Zr,Ti)O3 thin films?." Applied Physics Letters 75 (1999) 716–718.

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Madhukar, S, S Aggarwal, A.M Dhote, Ramamoorthy Ramesh, S.B Samavedam, S Choopun, and R.P Sharma. "Pulsed laser-ablation deposition of thin films of molybdenum suicide and its properties as a conducting barrier for ferroelectric random-access memory technology." Journal of Materials Research 14 (1999) 940–947.

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1998

Jenkins, I.G, T.K Song, S Madhukar, A.S Prakash, S Aggarwal, and Ramamoorthy Ramesh. "Dynamics of polarization loss in (Pb, La)(Zr, Ti)O3 thin film capacitors." Applied Physics Letters 72 (1998) 3300–3302.

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Keeble, D.J, B Nielsen, A Krishnan, K.G Lynn, S Madhukar, Ramamoorthy Ramesh, and C.F Young. "Vacancy defects in (Pb, La)(Zr, Ti)O3 capacitors observed by positron annihilation." Applied Physics Letters 73 (1998) 318–320.

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Keeble, D.J, A Krishnan, T Friessnegg, B Nielsen, S Madhukar, S Aggarwal, Ramamoorthy Ramesh, and E.H Poindexter. "Vacancy defects in thin-film La0.5Sr0.5CoO3-δ observed by positron annihilation." Applied Physics Letters 73 (1998) 508–510.

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Aggarwal, S, S.R Perusse, S Madhukar, T.K Song, C.L Canedy, Ramamoorthy Ramesh, S Choopun, R.P Sharma, T Venkatesan, and S.M Green. "Rapid thermal annealing of oxide electrodes for nonvolatile ferroelectric memory structures." Journal of Electroceramics 2 (1998) 171–179.

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1997

Keeble, D.J, S Madhukar, B Nielsen, A Krishnan, P Asoka-Kumar, S Aggarwal, Ramamoorthy Ramesh, and E.H Poindexter. "Vacancy related defects in La0.5Sr0.5CoO3-δ thin films." Materials Research Society Symposium - Proceedings. Vol. 477. MRS, Warrendale, PA, United States, 1997. 229–233.

Madhukar, S, S Aggarwal, A.M Dhote, Ramamoorthy Ramesh, A Krishnan, D Keeble, and E Poindexter. "Effect of oxygen stoichiometry on the electrical properties of La0.5Sr0.5CoO3 electrodes." Journal of Applied Physics 81 (1997) 3543–3547.

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Dhote, A.M, S Madhukar, D Young, T Venkatesan, Ramamoorthy Ramesh, C.M Cotell, and J.M Benedetto. "Low temperature growth and reliability of ferroelectric memory cell integrated on Si with conducting barrier stack." Journal of Materials Research 12 (1997) 1589–1594.

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1996

Dhote, A.M, S Madhukar, W Wei, T Venkatesan, Ramamoorthy Ramesh, and C.M Cotell. "Direct integration of ferroelectric La-Sr-Co-O/Pb-Nb-Zr-Ti-O/La-Sr-Co-O capacitors on silicon with conducting barrier layers." Applied Physics Letters 68 (1996) 1350–1352.

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1995

Dhote, A.M, S Madhukar, W Wei, T Venkatesan, Ramamoorthy Ramesh, and C.M Cotell. "Direct integration of ferroelectric La-Sr-Co-O/Pb-Nb-Zr-Ti-O/La-Sr-Co-O capacitors on silicon with conducting barrier layers." Applied Physics Letters (1995) 1350.

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