S Madhukar
Publications
Viewing 12 of 12 publications
1999
Defect identification in (La, Sr)CoO3-δ using positron annihilation spectroscopy." Materials Research Society Symposium - Proceedings. Vol. 541. 1999. 161–165.
, , , , , , , , , and . "Can lead nonstoichiometry influence ferroelectric properties of Pb(Zr,Ti)O3 thin films?." Applied Physics Letters 75 (1999) 716–718.
, , , , , , and . "Pulsed laser-ablation deposition of thin films of molybdenum suicide and its properties as a conducting barrier for ferroelectric random-access memory technology." Journal of Materials Research 14 (1999) 940–947.
, , , , , , and . "1998
Dynamics of polarization loss in (Pb, La)(Zr, Ti)O3 thin film capacitors." Applied Physics Letters 72 (1998) 3300–3302.
, , , , , and . "Vacancy defects in (Pb, La)(Zr, Ti)O3 capacitors observed by positron annihilation." Applied Physics Letters 73 (1998) 318–320.
, , , , , , and . "Vacancy defects in thin-film La0.5Sr0.5CoO3-δ observed by positron annihilation." Applied Physics Letters 73 (1998) 508–510.
, , , , , , , and . "Rapid thermal annealing of oxide electrodes for nonvolatile ferroelectric memory structures." Journal of Electroceramics 2 (1998) 171–179.
, , , , , , , , , and . "1997
Effect of oxygen stoichiometry on the electrical properties of La0.5Sr0.5CoO3 electrodes." Journal of Applied Physics 81 (1997) 3543–3547.
, , , , , , and . "Low temperature growth and reliability of ferroelectric memory cell integrated on Si with conducting barrier stack." Journal of Materials Research 12 (1997) 1589–1594.
, , , , , , and . "Vacancy related defects in La0.5Sr0.5CoO3-δ thin films." Materials Research Society Symposium - Proceedings. Vol. 477. MRS, Warrendale, PA, United States, 1997. 229–233.
, , , , , , , and . "1996
Direct integration of ferroelectric La-Sr-Co-O/Pb-Nb-Zr-Ti-O/La-Sr-Co-O capacitors on silicon with conducting barrier layers." Applied Physics Letters 68 (1996) 1350–1352.
, , , , , and . "1995
Direct integration of ferroelectric La-Sr-Co-O/Pb-Nb-Zr-Ti-O/La-Sr-Co-O capacitors on silicon with conducting barrier layers." Applied Physics Letters (1995) 1350.
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