@article{33806,
  keywords = {laser ablation, surface roughness, crystal structure, phase transitions, Ferroelectric materials, Random access storage, Lead compounds, Molybdenum compounds, Lead zirconate titanate, Thermal effects, Pulsed laser applications, Semiconducting silicon, Dielectric films, Electric conductivity of solids, Molybdenum silicide, Pulsed laser ablation (PLA)},
  author = {S Madhukar and S Aggarwal and A.M Dhote and Ramamoorthy Ramesh and S.B Samavedam and S Choopun and R.P Sharma},
  title = {Pulsed laser-ablation deposition of thin films of molybdenum suicide and its properties as a conducting barrier for ferroelectric random-access memory technology},
  abstract = {We report on the feasibility of using molybdenum suicide as a conducting barrier for integration of ferroelectric lead zirconate titanate capacitors on Si. Thin films of MoSi2 were deposited by pulsed laser-ablation deposition (PLD). The silicide films showed a structural transition from amorphous to orthorhombic to tetragonal phase as the temperature of deposition was changed from room temperature to 900 °C. The four-probe resistivity and surface roughness of the films decreased with an increase in the deposition temperature and crystallinity of the phase. Ferroelectric (La, Sr)CoO3/Pb(Nb, Zr, Ti)O3/(La, Sr)CoO3 capacitors were grown on Si/poly Si/MoSi2, and Si/poly Si/MoSi2/Pt structures. Transmission electron microscopy (TEM) studies of the MoSi2/LSCO and MoSi2/Pt/LSCO heterostructures indicated the formation of a thin layer of SiO2. In the case of Pt/MoSi2, Pt reacts with the silicide and forms PtSi, consuming the entire platinum layer and, thus, makes it unsuitable as a composite barrier. Electrical testing of the LSCO/PNZT/LSCO capacitors through capacitive coupling showed desirable ferroelectric properties on these substrates.},
  year = {1999},
  journal = {Journal of Materials Research},
  volume = {14},
  number = {3},
  pages = {940-947},
  issn = {08842914},
  note = {cited By 10},
  language = {eng},
}