TY - JOUR
KW - Laser ablation
KW - Surface roughness
KW - Crystal structure
KW - Phase transitions
KW - Ferroelectric materials
KW - Random access storage
KW - Lead compounds
KW - Molybdenum compounds
KW - Lead zirconate titanate (PZT)
KW - Thermal effects
KW - Pulsed laser applications
KW - Semiconducting silicon
KW - Dielectric films
KW - Electric conductivity of solids
KW - Molybdenum silicide
KW - Pulsed laser ablation (PLA)
AU - S Madhukar
AU - S Aggarwal
AU - A.M Dhote
AU - Ramamoorthy Ramesh
AU - S.B Samavedam
AU - S Choopun
AU - R.P Sharma
AB - We report on the feasibility of using molybdenum suicide as a conducting barrier for integration of ferroelectric lead zirconate titanate capacitors on Si. Thin films of MoSi2 were deposited by pulsed laser-ablation deposition (PLD). The silicide films showed a structural transition from amorphous to orthorhombic to tetragonal phase as the temperature of deposition was changed from room temperature to 900 °C. The four-probe resistivity and surface roughness of the films decreased with an increase in the deposition temperature and crystallinity of the phase. Ferroelectric (La, Sr)CoO3/Pb(Nb, Zr, Ti)O3/(La, Sr)CoO3 capacitors were grown on Si/poly Si/MoSi2, and Si/poly Si/MoSi2/Pt structures. Transmission electron microscopy (TEM) studies of the MoSi2/LSCO and MoSi2/Pt/LSCO heterostructures indicated the formation of a thin layer of SiO2. In the case of Pt/MoSi2, Pt reacts with the silicide and forms PtSi, consuming the entire platinum layer and, thus, makes it unsuitable as a composite barrier. Electrical testing of the LSCO/PNZT/LSCO capacitors through capacitive coupling showed desirable ferroelectric properties on these substrates.
BT - Journal of Materials Research
LA - eng
M1 - 3
N1 - cited By 10
N2 - We report on the feasibility of using molybdenum suicide as a conducting barrier for integration of ferroelectric lead zirconate titanate capacitors on Si. Thin films of MoSi2 were deposited by pulsed laser-ablation deposition (PLD). The silicide films showed a structural transition from amorphous to orthorhombic to tetragonal phase as the temperature of deposition was changed from room temperature to 900 °C. The four-probe resistivity and surface roughness of the films decreased with an increase in the deposition temperature and crystallinity of the phase. Ferroelectric (La, Sr)CoO3/Pb(Nb, Zr, Ti)O3/(La, Sr)CoO3 capacitors were grown on Si/poly Si/MoSi2, and Si/poly Si/MoSi2/Pt structures. Transmission electron microscopy (TEM) studies of the MoSi2/LSCO and MoSi2/Pt/LSCO heterostructures indicated the formation of a thin layer of SiO2. In the case of Pt/MoSi2, Pt reacts with the silicide and forms PtSi, consuming the entire platinum layer and, thus, makes it unsuitable as a composite barrier. Electrical testing of the LSCO/PNZT/LSCO capacitors through capacitive coupling showed desirable ferroelectric properties on these substrates.
PY - 1999
SP - 940
EP - 947
T2 - Journal of Materials Research
TI - Pulsed laser-ablation deposition of thin films of molybdenum suicide and its properties as a conducting barrier for ferroelectric random-access memory technology
VL - 14
SN - 08842914
ER -