B Nagaraj
Publications
Viewing 20 of 20 publications
2004
Ultrafast polarization switching in thin-film ferroelectrics." Applied Physics Letters 84 (2004) 1174–1176.
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Application of an ultrafast photonic technique to study polarization switching dynamics of thin-film ferroelectric capacitors." Journal of Lightwave Technology 21 (2003) 3282–3291.
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Radiation damage and its recovery in focused ion beam fabricated ferroelectric capacitors." Journal of Applied Physics 92 (2002) 3275–3278.
, , , , , and . "Interface characterization of all-perovskite oxide field effect heterostructures." Journal of Electroceramics 8 (2002) 233–241.
, , , , and . "Low-temperature integration of lead-based ferroelectric capacitors on Si with diffusion barrier layer." Applied Physics Letters 80 (2002) 3599–3601.
, , , , , , , , and . "Study of ultra-fast polarization switching in thin film ferroelectric capacitors." 2002 International Topical Meeting on Microwave Photonics, MWP 2002 - Technical Digest. Institute of Electrical and Electronics Engineers Inc., 2002. 197–200.
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Influence of contact electrodes on leakage characteristics in ferroelectric thin films." Journal of Applied Physics 90 (2001) 375–382.
, , and . "Electroresistance and electronic phase separation in mixed-valent manganites." Physical Review Letters 86 (2001) 5998–6001.
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Epitaxial PMN-PT relaxor thin films: dependence of dielectric and piezoelectric properties on film thickness." Materials Research Society Symposium - Proceedings. Vol. 596. Materials Research Society, Warrendale, PA, United States, 2000. 505–510.
, , , , , , , and . "Deposition and electrical characterization of dielectric/ferromagnetic heterostructure." Materials Research Society Symposium - Proceedings. Ed. , , , , and . Vol. 602. 2000. 363–370.
, , , , , , and . "High density ferroelectric memories: Materials, processing and scaling." Integrated Ferroelectrics 28 (2000) 213–225.
, , , , , , , and . "Correlation between oxidation resistance and crystallinity of Ti-Al as a barrier layer for high-density memories." Acta Materialia 48 (2000) 3387–3394.
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Oxide electrodes as barriers to hydrogen damage of Pb(Zr,Ti)O3-based ferroelectric capacitors." Applied Physics Letters 74 (1999) 3023–3025.
, , , and . "Leakage current mechanisms in lead-based thin-film ferroelectric capacitors." Physical Review B - Condensed Matter and Materials Physics 59 (1999) 16022–16027.
, , , , and . "Conducting diffusion barriers for integration of ferroelectric capacitors on Si." Integrated Ferroelectrics 25 (1999) 205–221.
, , , , , , , and . "Effect of mechanical constraint on the dielectric and piezoelectric behavior of epitaxial Pb(Mg1/3Nb2/3)O3(90%)-PbTiO3(10%) relaxor thin films." Applied Physics Letters 75 (1999) 4183–4185.
, , , , , , , and . "Switching properties of Pb(Nb, Zr,Ti)O3 capacitors using SrRuO3 electrodes." Applied Physics Letters 75 (1999) 1787–1789.
, , , , , , , , and . "Can lead nonstoichiometry influence ferroelectric properties of Pb(Zr,Ti)O3 thin films?." Applied Physics Letters 75 (1999) 716–718.
, , , , , , and . "(Ba,Sr)TiO3 thin films with conducting perovskite electrodes for dynamic random access memory applications." Applied Physics Letters 74 (1999) 3194–3196.
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Activation fields in ferroelectric thin film capacitors: Area dependence." Applied Physics Letters 73 (1998) 3366–3368.
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