B Nagaraj

Publications

Viewing 20 of 20 publications

2004

Li, J, B Nagaraj, H Liang, W Cao, C.H Lee, and Ramamoorthy Ramesh. "Ultrafast polarization switching in thin-film ferroelectrics." Applied Physics Letters 84 (2004) 1174–1176.

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2003

Li, J, H Liang, B Nagaraj, W Cao, C.H Lee, and Ramamoorthy Ramesh. "Application of an ultrafast photonic technique to study polarization switching dynamics of thin-film ferroelectric capacitors." Journal of Lightwave Technology 21 (2003) 3282–3291.

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2002

Stanishevsky, A, B Nagaraj, J Melngailis, Ramamoorthy Ramesh, L Khriachtchev, and E McDaniel. "Radiation damage and its recovery in focused ion beam fabricated ferroelectric capacitors." Journal of Applied Physics 92 (2002) 3275–3278.

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Nagaraj, B, T Wu, S.B Ogale, T Venkatesan, and Ramamoorthy Ramesh. "Interface characterization of all-perovskite oxide field effect heterostructures." Journal of Electroceramics 8 (2002) 233–241.

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Liu, B.T, K Maki, S Aggarwal, B Nagaraj, V Nagarajan, L Salamanca-Riba, Ramamoorthy Ramesh, A.M Dhote, and O Auciello. "Low-temperature integration of lead-based ferroelectric capacitors on Si with diffusion barrier layer." Applied Physics Letters 80 (2002) 3599–3601.

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Li, J, H Liang, W Cao, C.H Lee, B Nagaraj, and Ramamoorthy Ramesh. "Study of ultra-fast polarization switching in thin film ferroelectric capacitors." 2002 International Topical Meeting on Microwave Photonics, MWP 2002 - Technical Digest. Institute of Electrical and Electronics Engineers Inc., 2002. 197–200.

2001

Nagaraj, B, S Aggarwal, and Ramamoorthy Ramesh. "Influence of contact electrodes on leakage characteristics in ferroelectric thin films." Journal of Applied Physics 90 (2001) 375–382.

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Wu, T, S.B Ogale, J.E Garrison, B Nagaraj, A Biswas, Z Chen, R.L Greene, Ramamoorthy Ramesh, T Venkatesan, and A.J Millis. "Electroresistance and electronic phase separation in mixed-valent manganites." Physical Review Letters 86 (2001) 5998–6001.

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2000

Nagarajan, V, S.P Alpay, C.S Ganpule, B Nagaraj, S Aggarwal, A.L Roytburd, E.D Williams, and Ramamoorthy Ramesh. "Epitaxial PMN-PT relaxor thin films: dependence of dielectric and piezoelectric properties on film thickness." Materials Research Society Symposium - Proceedings. Vol. 596. Materials Research Society, Warrendale, PA, United States, 2000. 505–510.

Wu, T, S.B Ogale, J.E Garrison, B Nagaraj, Z Chen, Ramamoorthy Ramesh, and T Venkatesan. "Deposition and electrical characterization of dielectric/ferromagnetic heterostructure." Materials Research Society Symposium - Proceedings. Ed. Rzchowski M.S, Kawasaki M, Millis A.J, Molnar S, and Rajeswari M. Vol. 602. 2000. 363–370.

Aggarwal, S, C Ganpule, I.G Jenkins, B Nagaraj, A Stanishevsky, J Melngailis, E Williams, and Ramamoorthy Ramesh. "High density ferroelectric memories: Materials, processing and scaling." Integrated Ferroelectrics 28 (2000) 213–225.

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Aggarwal, S, B Nagaraj, I.G Jenkins, H Li, R.P Sharma, L Salamanca-Riba, Ramamoorthy Ramesh, A.M Dhote, A.R Krauss, and O Auciello. "Correlation between oxidation resistance and crystallinity of Ti-Al as a barrier layer for high-density memories." Acta Materialia 48 (2000) 3387–3394.

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1999

Nagarajan, V, C.S Ganpule, B Nagaraj, S Aggarwal, S.P Alpay, A.L Roytburd, E.D Williams, and Ramamoorthy Ramesh. "Effect of mechanical constraint on the dielectric and piezoelectric behavior of epitaxial Pb(Mg1/3Nb2/3)O3(90%)-PbTiO3(10%) relaxor thin films." Applied Physics Letters 75 (1999) 4183–4185.

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Aggarwal, S, I.G Jenkins, B Nagaraj, C.J Kerr, C Canedy, Ramamoorthy Ramesh, G Velasquez, L Boyer, and J .T Jr. "Switching properties of Pb(Nb, Zr,Ti)O3 capacitors using SrRuO3 electrodes." Applied Physics Letters 75 (1999) 1787–1789.

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Aggarwal, S, S Madhukar, B Nagaraj, I.G Jenkins, Ramamoorthy Ramesh, L Boyer, and J .T Jr. "Can lead nonstoichiometry influence ferroelectric properties of Pb(Zr,Ti)O3 thin films?." Applied Physics Letters 75 (1999) 716–718.

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Nagaraj, B, T Sawhney, S Perusse, S Aggarwal, Ramamoorthy Ramesh, V.S Kaushik, S Zafar, R.E Jones, J.-H Lee, V Balu, and J Lee. "(Ba,Sr)TiO3 thin films with conducting perovskite electrodes for dynamic random access memory applications." Applied Physics Letters 74 (1999) 3194–3196.

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Aggarwal, S, S.R Perusse, B Nagaraj, and Ramamoorthy Ramesh. "Oxide electrodes as barriers to hydrogen damage of Pb(Zr,Ti)O3-based ferroelectric capacitors." Applied Physics Letters 74 (1999) 3023–3025.

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Nagaraj, B, S Aggarwal, T.K Song, T Sawhney, and Ramamoorthy Ramesh. "Leakage current mechanisms in lead-based thin-film ferroelectric capacitors." Physical Review B - Condensed Matter and Materials Physics 59 (1999) 16022–16027.

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Aggarwal, S, I.G Jenkins, B Nagaraj, C Canedy, Ramamoorthy Ramesh, G Velasquez, L Boyer, and J .T Jr. "Conducting diffusion barriers for integration of ferroelectric capacitors on Si." Integrated Ferroelectrics 25 (1999) 205–221.

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1998

Song, T.K, S Aggarwal, Y Gallais, B Nagaraj, Ramamoorthy Ramesh, and J .T Jr. "Activation fields in ferroelectric thin film capacitors: Area dependence." Applied Physics Letters 73 (1998) 3366–3368.

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