TY - JOUR
KW - Thin films
KW - Perovskite
KW - Electrodes
KW - Electric properties
KW - Ferroelectric devices
KW - Lead compounds
KW - Silicon wafers
KW - Capacitors
KW - Ferroelectric properties
KW - Diffusion barrier layers
KW - Data storage equipment
KW - Polysilanes
KW - Ferroelectric capacitor structures
KW - High density ferroelectric memories
KW - Polysilicon plug
AU - S Aggarwal
AU - C Ganpule
AU - I.G Jenkins
AU - B Nagaraj
AU - A Stanishevsky
AU - J Melngailis
AU - E Williams
AU - Ramamoorthy Ramesh
AB - A review is presented of approaches to integrate thin film Pb(Zr,Ti)O3-based ferroelectric capacitor structures on a filled poly-Si plug, which is a critical requirement for a high-density memory technology. Key materials issues relevant to the development of conducting diffusion barrier layers for integration of these materials on Si wafers are discussed. Specific attention in this paper is on the use of conducting perovskite oxide electrodes to contact the ferroelectric thin film. The second part of this review focuses on some novel materials that we have investigated for use as diffusion barriers. Finally, we present data on the scaling of ferroelectric properties with lateral dimensions of the capacitor. © 2000 OPA (Overseas Publishers Association) N.V. Published by license under the Gordon and Breach Science Publishers imprint.
BT - Integrated Ferroelectrics
DO - 10.1080/10584580008222233
LA - eng
M1 - 1-4
N1 - cited By 5
N2 - A review is presented of approaches to integrate thin film Pb(Zr,Ti)O3-based ferroelectric capacitor structures on a filled poly-Si plug, which is a critical requirement for a high-density memory technology. Key materials issues relevant to the development of conducting diffusion barrier layers for integration of these materials on Si wafers are discussed. Specific attention in this paper is on the use of conducting perovskite oxide electrodes to contact the ferroelectric thin film. The second part of this review focuses on some novel materials that we have investigated for use as diffusion barriers. Finally, we present data on the scaling of ferroelectric properties with lateral dimensions of the capacitor. © 2000 OPA (Overseas Publishers Association) N.V. Published by license under the Gordon and Breach Science Publishers imprint.
PB - Taylor and Francis Inc.
PY - 2000
SP - 213
EP - 225
T2 - Integrated Ferroelectrics
TI - High density ferroelectric memories: Materials, processing and scaling
VL - 28
SN - 10584587
ER -