@article{33791,
  keywords = {electrodes, Polarization, ferroelectricity, Strontium compounds, Ferroelectric devices, Lead compounds, Capacitors, Lead zirconate titanate, Thermal effects, Polycrystalline materials, Sol-gels, Data storage equipment},
  author = {S Aggarwal and I.G Jenkins and B Nagaraj and C.J Kerr and C Canedy and Ramamoorthy Ramesh and G Velasquez and L Boyer and J .T Jr},
  title = {Switching properties of Pb(Nb, Zr,Ti)O3 capacitors using SrRuO3 electrodes},
  abstract = {We report on ferroelectric properties of polycrystalline sol-gel derived Pb(Nb,Zr,Ti)O3 (PNZT) thin films with SrRuO3 (SRO) electrodes. The processing temperature of the bottom electrode was varied between 550 and 850°C. The polarization of the ferroelectric capacitors was dependent on the processing temperature of the bottom electrode. The capacitors exhibit low switching fields (40 kV/cm), high resistivity (1011 Ω cm at 3 V) and high remanent polarization values (19 μC/cm2 at 3 V), desirable properties for high-density ferroelectric memories. The activation field for these capacitors was measured to be ∼350 kV/cm and the polarization values exhibited a shallow dependence on the pulse width from 1 s to 1 μs. Fatigue, logic state retention, and dynamic imprint tests indicate robust capacitors from a memory viewpoint. © 1999 American Institute of Physics.},
  year = {1999},
  journal = {Applied Physics Letters},
  volume = {75},
  number = {12},
  pages = {1787-1789},
  publisher = {American Institute of Physics Inc.},
  issn = {00036951},
  doi = {10.1063/1.124820},
  note = {cited By 40},
  language = {eng},
}