G Velasquez

Publications

Viewing 4 of 4 publications

2000

Aggarwal, S, S.R Perusse, C.J Kerr, Ramamoorthy Ramesh, D.B Romero, J .T Jr, L Boyer, and G Velasquez. "Recovery of forming gas damaged Pb(Nb, Zr, Ti)O3 capacitors." Applied Physics Letters 76 (2000) 918–920.

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1999

Aggarwal, S, I.G Jenkins, B Nagaraj, C.J Kerr, C Canedy, Ramamoorthy Ramesh, G Velasquez, L Boyer, and J .T Jr. "Switching properties of Pb(Nb, Zr,Ti)O3 capacitors using SrRuO3 electrodes." Applied Physics Letters 75 (1999) 1787–1789.

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Aggarwal, S, I.G Jenkins, B Nagaraj, C Canedy, Ramamoorthy Ramesh, G Velasquez, L Boyer, and J .T Jr. "Conducting diffusion barriers for integration of ferroelectric capacitors on Si." Integrated Ferroelectrics 25 (1999) 205–221.

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.T, J , Jr, L.L Boyer, G Velasquez, Ramamoorthy Ramesh, S Aggarwal, and V Keramidas. "Effect of hydrogen anneals on niobium-doped lead zirconate titanate capacitors with lanthanum strontium cobalt oxide/platinum electrodes." Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 38 (1999) 5361–5363.

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