TY - JOUR
KW - Electrodes
KW - Polarization
KW - Ferroelectricity
KW - Strontium compounds
KW - Ferroelectric devices
KW - Lead compounds
KW - Capacitors
KW - Lead zirconate titanate (PZT)
KW - Thermal effects
KW - Polycrystalline materials
KW - Sol-gels
KW - Data storage equipment
AU - S Aggarwal
AU - I.G Jenkins
AU - B Nagaraj
AU - C.J Kerr
AU - C Canedy
AU - Ramamoorthy Ramesh
AU - G Velasquez
AU - L Boyer
AU - J .T Jr
AB - We report on ferroelectric properties of polycrystalline sol-gel derived Pb(Nb,Zr,Ti)O3 (PNZT) thin films with SrRuO3 (SRO) electrodes. The processing temperature of the bottom electrode was varied between 550 and 850°C. The polarization of the ferroelectric capacitors was dependent on the processing temperature of the bottom electrode. The capacitors exhibit low switching fields (40 kV/cm), high resistivity (1011 Ω cm at 3 V) and high remanent polarization values (19 μC/cm2 at 3 V), desirable properties for high-density ferroelectric memories. The activation field for these capacitors was measured to be ∼350 kV/cm and the polarization values exhibited a shallow dependence on the pulse width from 1 s to 1 μs. Fatigue, logic state retention, and dynamic imprint tests indicate robust capacitors from a memory viewpoint. © 1999 American Institute of Physics.
BT - Applied Physics Letters
DO - 10.1063/1.124820
LA - eng
M1 - 12
N1 - cited By 40
N2 - We report on ferroelectric properties of polycrystalline sol-gel derived Pb(Nb,Zr,Ti)O3 (PNZT) thin films with SrRuO3 (SRO) electrodes. The processing temperature of the bottom electrode was varied between 550 and 850°C. The polarization of the ferroelectric capacitors was dependent on the processing temperature of the bottom electrode. The capacitors exhibit low switching fields (40 kV/cm), high resistivity (1011 Ω cm at 3 V) and high remanent polarization values (19 μC/cm2 at 3 V), desirable properties for high-density ferroelectric memories. The activation field for these capacitors was measured to be ∼350 kV/cm and the polarization values exhibited a shallow dependence on the pulse width from 1 s to 1 μs. Fatigue, logic state retention, and dynamic imprint tests indicate robust capacitors from a memory viewpoint. © 1999 American Institute of Physics.
PB - American Institute of Physics Inc.
PY - 1999
SP - 1787
EP - 1789
T2 - Applied Physics Letters
TI - Switching properties of Pb(Nb, Zr,Ti)O3 capacitors using SrRuO3 electrodes
VL - 75
SN - 00036951
ER -