@article{33675, keywords = {Nucleation, Photodiodes, Polarization, Random access storage, Ferroelectric devices, Ferroelectric thin films, Electric resistance, Capacitors, Switching time, Growth kinetics, Polarization reversal, Mathematical models, Electrical pulses, Merz-Ishibashi model, Merz-Shur model, Electric lines, Laser pulses}, author = {J Li and B Nagaraj and H Liang and W Cao and C.H Lee and Ramamoorthy Ramesh}, title = {Ultrafast polarization switching in thin-film ferroelectrics}, abstract = {The dynamics of ultrafast polarization switching in ferroelectric thin films was investigated. The semiconductor photoconductive switch with laser illumination which was used as 'pulse generator' produced jitter-free electrical pulses. The quantitative measurements yield ferroelectric polarization switching time of 220 ps using femtosecond optically generated electrical pulse with rise time of 68 ps. The polarization switching time measurement was limited by the RC-time constant and the rise time of input electric pulse. The switching transient models which used the Merz-Ishibashi model and Mer-Shur model yield the characteristic switching time constant of 70-90 ps.}, year = {2004}, journal = {Applied Physics Letters}, volume = {84}, number = {7}, pages = {1174-1176}, issn = {00036951}, doi = {10.1063/1.1644917}, note = {cited By 196}, language = {eng}, }