@article{33800,
  keywords = {annealing, Hydrogen, electrochemical electrodes, lanthanum compounds, Polarization, ferroelectricity, Strontium compounds, Ferroelectric devices, Lead compounds, Ferroelectric capacitors, Capacitors, Dielectric films, Forming gas anneals (FGA)},
  author = {S Aggarwal and S.R Perusse and B Nagaraj and Ramamoorthy Ramesh},
  title = {Oxide electrodes as barriers to hydrogen damage of Pb(Zr,Ti)O3-based ferroelectric capacitors},
  abstract = {The use of (La,Sr)CoO3 (LSCO) oxide electrodes as diffusion barriers to hydrogen is investigated during forming gas anneals (FGA). After FGA, almost no bipolar fatigue up to 1011 cycles, good logic state retention, and no imprint at 100 °C are exhibited by the ferroelectric capacitors.},
  year = {1999},
  journal = {Applied Physics Letters},
  volume = {74},
  number = {20},
  pages = {3023-3025},
  publisher = {American Institute of Physics Inc., Woodbury},
  issn = {00036951},
  doi = {10.1063/1.124052},
  note = {cited By 59},
  language = {eng},
}