@article{33799,
  keywords = {thin films, electric potential, Perovskite, electrodes, current density, Permittivity, Strontium compounds, strontium titanate, Capacitance, Capacitors, Leakage currents, Barium titanate, Dynamic random access storage, Dielectric films, Poole-Frenkel mechanisms},
  author = {B Nagaraj and T Sawhney and S Perusse and S Aggarwal and Ramamoorthy Ramesh and V.S Kaushik and S Zafar and R.E Jones and J.-H Lee and V Balu and J Lee},
  title = {(Ba,Sr)TiO3 thin films with conducting perovskite electrodes for dynamic random access memory applications},
  abstract = {The leakage current mechanism of (Ba,Sr)TiO3 capacitors were examined for dynamic random access memory applications. Leakage currents were measured in the temperature range 20-150 °C, and the data was analyzed for the various mechanisms. The extracted dielectric constant, corresponding to Poole-Frenkel mechanism, is in good agreement with the experimental value of the optical dielectric constant.},
  year = {1999},
  journal = {Applied Physics Letters},
  volume = {74},
  number = {21},
  pages = {3194-3196},
  publisher = {American Institute of Physics Inc., Woodbury},
  issn = {00036951},
  doi = {10.1063/1.124104},
  note = {cited By 64},
  language = {eng},
}