@article{33712,
  keywords = {deposition, lead, Electron energy loss spectroscopy, aluminum, polycrystalline, zirconium, integration, ferroelectricity, Ferroelectric devices, Ferroelectric capacitors, Ferroelectric films, Energy dissipation, Silicon wafers, Capacitors, Low Power, Bottom electrodes, Conductive films, Semiconducting lead compounds, Low temperatures, Amorphous materials, Semiconducting silicon compounds, Ferroelectric property, Silicon substrates, Sol-gel process, Barrier layers, Concentration of dissolved oxygen, Conducting barriers, Crystallinities, Deposition pressures, Diffusion barrier layers, High power density, Lead zirconate titanate thin films, Non-volatile ferroelectric memories, Pb(Zr, Ti)O, Power densities, PZT film, Si wafer, Silicon transistors, Sputtering conditions, Sputtering power, Amorphous films, Dissolved oxygen, Diffusion barriers},
  author = {B.T Liu and K Maki and S Aggarwal and B Nagaraj and V Nagarajan and L Salamanca-Riba and Ramamoorthy Ramesh and A.M Dhote and O Auciello},
  title = {Low-temperature integration of lead-based ferroelectric capacitors on Si with diffusion barrier layer},
  abstract = {Ferroelectric lead zirconate titanate thin films have been integrated on silicon substrates using Ti-Al-based conducting diffusion barriers produced by sputter deposition. The microstructure of the Ti-Al barrier layer was systematically altered through changes in the sputtering conditions, specifically the power density and deposition pressure. We find that the crystallinity of the Ti-Al film strongly correlates with sputtering power density and ambient i.e., it is amorphous at low power density and/or high deposition pressure, and polycrystalline at high power density and/or low deposition pressure. Electron energy loss spectroscopy studies demonstrate that the amorphous Ti-Al (a-Ti-Al) films contain a higher concentration of dissolved oxygen than crystalline Ti-Al. A low temperature sol-gel process has been used to prepare Pb(Zr,Ti)O3 PZT films at 450°C on conducting Si wafers with a-Ti-Al conducting barrier layer and La-Sr-Co-O top and bottom electrodes. The excellent ferroelectric properties obtained with the a-Ti-Al barrier provide a promising approach for integration of PZT-based capacitors with silicon transistor technology for the fabrication of nonvolatile ferroelectric memories. © 2002 American Institute of Physics.},
  year = {2002},
  journal = {Applied Physics Letters},
  volume = {80},
  number = {19},
  pages = {3599-3601},
  issn = {00036951},
  doi = {10.1063/1.1477281},
  note = {cited By 45},
  language = {eng},
}