TY - JOUR
KW - Electric potential
KW - Perovskite
KW - Oxides
KW - Lanthanum compounds
KW - Strontium compounds
KW - Heterojunctions
KW - Strontium titanate
KW - Interfaces (materials)
KW - Electric field effects
KW - Field effect transistors
KW - Gate oxide
KW - Current voltage characteristics
KW - Electric contacts
KW - Niobium
KW - Semiconductor device manufacture
KW - Capacitance voltage characteristic
KW - Interface state density
KW - Lanthanum strontium cuprous oxide
AU - B Nagaraj
AU - T Wu
AU - S.B Ogale
AU - T Venkatesan
AU - Ramamoorthy Ramesh
AB - All-oxide devices consisting of Niobium-doped Strontium Titanate (Nb:STO)/Strontium Titanate (STO)/Lanthanum Strontium Cuprous Oxide (LSCO) heterostructures were fabricated and characterized electrically for their interface properties through capacitance-voltage (C-V) and current-voltage (I-V) techniques, in the context of electric field effect studies. The C-V studies establish the occurrence of charge modulation in the LSCO channel. Absence of hysteresis in the C-V characteristic when the voltage is retraced suggests the absence of mobile ions in the gate oxide and slow interface traps. This is further corroborated by the absence of drift in the C-V characteristic and shift in the flat band voltage (VFB) when the device is subjected to temperature-bias aging. The interface state density obtained from VFB is ∼1012/cm2. The uncompensated hole concentration in the LSCO channel calculated from the measured room temperature C-V data is ∼ 1020/cm3 and is in good agreement with the expected hole concentration in LSCO. Current-time and current-voltage plots are invariant with respect to the polarity of the applied voltage up to ∼5 V. This, in a structure with asymmetric interfaces, indicates that the electrical contacts to STO are non-blocking and the conduction through STO is bulk-limited in this voltage regime. Thickness dependent current and capacitance studies also corroborate the bulk-limited nature of conduction through the device in this voltage regime. However, I-V characteristic shows a rectifying nature beyond ∼8 V indicating that the mechanism in this voltage regime could be interface limited.
BT - Journal of Electroceramics
DO - 10.1023/A:1020806402413
LA - eng
M1 - 3
N1 - cited By 15
N2 - All-oxide devices consisting of Niobium-doped Strontium Titanate (Nb:STO)/Strontium Titanate (STO)/Lanthanum Strontium Cuprous Oxide (LSCO) heterostructures were fabricated and characterized electrically for their interface properties through capacitance-voltage (C-V) and current-voltage (I-V) techniques, in the context of electric field effect studies. The C-V studies establish the occurrence of charge modulation in the LSCO channel. Absence of hysteresis in the C-V characteristic when the voltage is retraced suggests the absence of mobile ions in the gate oxide and slow interface traps. This is further corroborated by the absence of drift in the C-V characteristic and shift in the flat band voltage (VFB) when the device is subjected to temperature-bias aging. The interface state density obtained from VFB is ∼1012/cm2. The uncompensated hole concentration in the LSCO channel calculated from the measured room temperature C-V data is ∼ 1020/cm3 and is in good agreement with the expected hole concentration in LSCO. Current-time and current-voltage plots are invariant with respect to the polarity of the applied voltage up to ∼5 V. This, in a structure with asymmetric interfaces, indicates that the electrical contacts to STO are non-blocking and the conduction through STO is bulk-limited in this voltage regime. Thickness dependent current and capacitance studies also corroborate the bulk-limited nature of conduction through the device in this voltage regime. However, I-V characteristic shows a rectifying nature beyond ∼8 V indicating that the mechanism in this voltage regime could be interface limited.
PY - 2002
SP - 233
EP - 241
T2 - Journal of Electroceramics
TI - Interface characterization of all-perovskite oxide field effect heterostructures
VL - 8
SN - 13853449
ER -