TY - JOUR
KW - Deposition
KW - Lead
KW - Electron energy loss spectroscopy
KW - Aluminum
KW - Polycrystalline
KW - Zirconium
KW - Integration
KW - Ferroelectricity
KW - Ferroelectric devices
KW - Ferroelectric capacitors
KW - Ferroelectric films
KW - Energy dissipation
KW - Silicon wafers
KW - Capacitors
KW - Low Power
KW - Bottom electrodes
KW - Conductive films
KW - Semiconducting lead compounds
KW - Low temperatures
KW - Amorphous materials
KW - Semiconducting silicon compounds
KW - Ferroelectric property
KW - Silicon substrates
KW - Sol-gel process
KW - Barrier layers
KW - Concentration of dissolved oxygen
KW - Conducting barriers
KW - Crystallinities
KW - Deposition pressures
KW - Diffusion barrier layers
KW - High power density
KW - Lead zirconate titanate thin films
KW - Non-volatile ferroelectric memories
KW - Pb(Zr
KW - Ti)O
KW - Power densities
KW - PZT film
KW - Si wafer
KW - Silicon transistors
KW - Sputtering conditions
KW - Sputtering power
KW - Amorphous films
KW - Dissolved oxygen
KW - Diffusion barriers
AU - B.T Liu
AU - K Maki
AU - S Aggarwal
AU - B Nagaraj
AU - V Nagarajan
AU - L Salamanca-Riba
AU - Ramamoorthy Ramesh
AU - A.M Dhote
AU - O Auciello
AB - Ferroelectric lead zirconate titanate thin films have been integrated on silicon substrates using Ti-Al-based conducting diffusion barriers produced by sputter deposition. The microstructure of the Ti-Al barrier layer was systematically altered through changes in the sputtering conditions, specifically the power density and deposition pressure. We find that the crystallinity of the Ti-Al film strongly correlates with sputtering power density and ambient i.e., it is amorphous at low power density and/or high deposition pressure, and polycrystalline at high power density and/or low deposition pressure. Electron energy loss spectroscopy studies demonstrate that the amorphous Ti-Al (a-Ti-Al) films contain a higher concentration of dissolved oxygen than crystalline Ti-Al. A low temperature sol-gel process has been used to prepare Pb(Zr,Ti)O3 PZT films at 450°C on conducting Si wafers with a-Ti-Al conducting barrier layer and La-Sr-Co-O top and bottom electrodes. The excellent ferroelectric properties obtained with the a-Ti-Al barrier provide a promising approach for integration of PZT-based capacitors with silicon transistor technology for the fabrication of nonvolatile ferroelectric memories. © 2002 American Institute of Physics.
BT - Applied Physics Letters
DO - 10.1063/1.1477281
LA - eng
M1 - 19
N1 - cited By 45
N2 - Ferroelectric lead zirconate titanate thin films have been integrated on silicon substrates using Ti-Al-based conducting diffusion barriers produced by sputter deposition. The microstructure of the Ti-Al barrier layer was systematically altered through changes in the sputtering conditions, specifically the power density and deposition pressure. We find that the crystallinity of the Ti-Al film strongly correlates with sputtering power density and ambient i.e., it is amorphous at low power density and/or high deposition pressure, and polycrystalline at high power density and/or low deposition pressure. Electron energy loss spectroscopy studies demonstrate that the amorphous Ti-Al (a-Ti-Al) films contain a higher concentration of dissolved oxygen than crystalline Ti-Al. A low temperature sol-gel process has been used to prepare Pb(Zr,Ti)O3 PZT films at 450°C on conducting Si wafers with a-Ti-Al conducting barrier layer and La-Sr-Co-O top and bottom electrodes. The excellent ferroelectric properties obtained with the a-Ti-Al barrier provide a promising approach for integration of PZT-based capacitors with silicon transistor technology for the fabrication of nonvolatile ferroelectric memories. © 2002 American Institute of Physics.
PY - 2002
SP - 3599
EP - 3601
T2 - Applied Physics Letters
TI - Low-temperature integration of lead-based ferroelectric capacitors on Si with diffusion barrier layer
VL - 80
SN - 00036951
ER -