A.R Krauss

Publications

Viewing 7 of 7 publications

2001

Krauss, A.R, O Auciello, A.M Dhote, J Im, S Aggarwal, Ramamoorthy Ramesh, E.A Irene, Y Gao, and A.H Mueller. "Studies of ferroelectric film growth and capacitor interface processes via in situ analytical techniques and correlation with electrical properties." Integrated Ferroelectrics 32 (2001) 121–131.

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2000

Auciello, O, A.R Krauss, J Im, A Dhote, D.M Gruen, E.A Irene, Y Gao, A.H Mueller, and Ramamoorthy Ramesh. "Studies of ferroelectric heterostructure thin films and interfaces, via in situ analytical techniques." Integrated Ferroelectrics 28 (2000) 1–12.

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Aggarwal, S, B Nagaraj, I.G Jenkins, H Li, R.P Sharma, L Salamanca-Riba, Ramamoorthy Ramesh, A.M Dhote, A.R Krauss, and O Auciello. "Correlation between oxidation resistance and crystallinity of Ti-Al as a barrier layer for high-density memories." Acta Materialia 48 (2000) 3387–3394.

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1999

Dhote, A.M, A.R Krauss, O Auciello, J Im, D.M Gruen, Ramamoorthy Ramesh, S.P Pai, and T Venkatesan. "Studies of metallic species incorporation during growth of SrBi2Ta2O9 films on YBa2Cu3O7-x substrates using mass spectroscopy of recoiled ions." Materials Research Society Symposium - Proceedings. Vol. 541. 1999. 281–286.

Krauss, A.R, A Dhote, O Auciello, J Im, Ramamoorthy Ramesh, and S Aggarwal. "Studies of hydrogen-induced degradation processes in Pb(Zr1-xTix)O3 (PZT) and SrBi2Ta2O9 (SBT) ferroelectric film-based capacitors." Integrated Ferroelectrics. Vol. 27. Gordon & Breach Science Publ Inc, Newark, 1999. 147–157.

Auciello, O, A.R Krauss, I.M Jaemo, A Dhote, D.M Gruen, S Aggarwal, Ramamoorthy Ramesh, E.A Irene, Y Gao, and A.H Mueller. "Studies of ferroelectric heterostructure thin films, interfaces, and device-related processes via in situ analytical techniques." Integrated Ferroelectrics. Vol. 27. Gordon & Breach Science Publ Inc, Newark, 1999. 103–118.

1998

Im, J, A.R Krauss, A.M Dhote, D.M Gruen, O Auciello, Ramamoorthy Ramesh, and R.P.H Chang. "Studies of metallic species and oxygen incorporation during sputter-deposition of SrBi2Ta2O9 films, using mass spectroscopy of recoiled ions." Applied Physics Letters 72 (1998) 2529–2531.

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