TY - JOUR
KW - Transmission electron microscopy
KW - Stoichiometry
KW - Scanning electron microscopy
KW - Film growth
KW - Electric properties
KW - Thin film devices
KW - Interfaces (materials)
KW - Ferroelectric thin films
KW - X-ray photoelectron spectroscopy
KW - Magnetron sputtering
KW - Recoil spectroscopy
KW - Crystal microstructure
KW - Composition effects
KW - Ellipsometry
KW - Capacitor interface
KW - Time of flight ion scattering
AU - A.R Krauss
AU - O Auciello
AU - A.M Dhote
AU - J Im
AU - S Aggarwal
AU - Ramamoorthy Ramesh
AU - E.A Irene
AU - Yuan Gao
AU - A.H Mueller
AB - Precise control of composition and microstructure of multicomponent oxide thin films is critical for the production of ferroelectric and high dielectric constant thin film devices. In addition, the integration of film-based capacitors with semiconductor substrates, for device fabrication, requires good control of the composition and structure of the dielectric/substrate and top electrode/dielectric interfaces to control the capacitor properties. In order to understand the processes described above, we are using a variety of integrated complementary in situ analytical techniques including time-of-flight ion scattering and recoil spectroscopy, X-ray photoelectron spectroscopy, spectroscopic ellipsometry, and ex situ methods such as transmission electron microscopy, scanning force microscopy, and scanning electron microscopy. Examples of studies recently performed by our group that are reviewed here include: (a) effects of microstructure on the oxidation of Ti-Al layers that can be used in a dual functionality as a diffusion barrier and bottom electrode for integration of ferroelectric capacitors with semiconductors; (b) studies of the surface and dielectric layer/bottom electrode interface during growth of BaxSr1-xTiO3 films on Ir/TiN/SiO2/Si for fabrication of BST capacitors for DRAMs; and (c) studies of the effect of interface contamination and structure on the electrical properties of BST capacitors for high frequency devices.
BT - Integrated Ferroelectrics
LA - eng
M1 - 1-4
N1 - cited By 5
N2 - Precise control of composition and microstructure of multicomponent oxide thin films is critical for the production of ferroelectric and high dielectric constant thin film devices. In addition, the integration of film-based capacitors with semiconductor substrates, for device fabrication, requires good control of the composition and structure of the dielectric/substrate and top electrode/dielectric interfaces to control the capacitor properties. In order to understand the processes described above, we are using a variety of integrated complementary in situ analytical techniques including time-of-flight ion scattering and recoil spectroscopy, X-ray photoelectron spectroscopy, spectroscopic ellipsometry, and ex situ methods such as transmission electron microscopy, scanning force microscopy, and scanning electron microscopy. Examples of studies recently performed by our group that are reviewed here include: (a) effects of microstructure on the oxidation of Ti-Al layers that can be used in a dual functionality as a diffusion barrier and bottom electrode for integration of ferroelectric capacitors with semiconductors; (b) studies of the surface and dielectric layer/bottom electrode interface during growth of BaxSr1-xTiO3 films on Ir/TiN/SiO2/Si for fabrication of BST capacitors for DRAMs; and (c) studies of the effect of interface contamination and structure on the electrical properties of BST capacitors for high frequency devices.
PB - Gordon and Breach Science Publishers Inc.
PY - 2001
SP - 121
EP - 131
T2 - Integrated Ferroelectrics
TI - Studies of ferroelectric film growth and capacitor interface processes via in situ analytical techniques and correlation with electrical properties
VL - 32
SN - 10584587
ER -