TY - JOUR
KW - Thin films
KW - Spectroscopic ellipsometry
KW - Film growth
KW - Ferroelectric materials
KW - Strontium compounds
KW - X-ray scattering
KW - Heterojunctions
KW - Ferroelectric films
KW - Interfaces (materials)
KW - Surface treatment
KW - Electron scattering
KW - Barium compounds
KW - Ion scattering
KW - Recoil spectroscopy
KW - Ellipsometry
KW - Electron spectroscopy
AU - O Auciello
AU - A.R Krauss
AU - J Im
AU - A Dhote
AU - D.M Gruen
AU - E.A Irene
AU - Yuan Gao
AU - A.H Mueller
AU - Ramamoorthy Ramesh
AB - The science and technology of ferroelectric thin films has experienced an explosive development during the last ten years. Low-density non-volatile ferroelectric random access memories (NVFRAMs) are now incorporated in commercial products such as "smart cards", while high permittivity capacitors are incorporated in cellular phones. However, substantial work is still needed to develop materials integration strategies for high-density memories. We have demonstrated that the implementation of complementary in situ characterization techniques is critical to understand film growth and interface processes, which play critical roles in film microstructures and properties. We are using uniquely integrated time of flight ion scattering and recoil spectroscopy (TOF-ISARS) and spectroscopic ellipsometry (SE) techniques to perform in situ, real-time studies of film growth processes in the high background gas pressure required to growth ferroelectric thin films. TOF-ISARS provides information on surface processes, while SE permits the investigation of buried interfaces as they are being formed. Recent studies on SrBi2Ta2O9 (SET) and BaxSr1-xTiO3 (BST) film growth and interface processes are discussed. © 2000 OPA (Overseas Publishers Association) N.V. Published by license under the Gordon and Breach Science Publishers imprint.
BT - Integrated Ferroelectrics
DO - 10.1080/10584580008222216
LA - eng
M1 - 1-4
N1 - cited By 0
N2 - The science and technology of ferroelectric thin films has experienced an explosive development during the last ten years. Low-density non-volatile ferroelectric random access memories (NVFRAMs) are now incorporated in commercial products such as "smart cards", while high permittivity capacitors are incorporated in cellular phones. However, substantial work is still needed to develop materials integration strategies for high-density memories. We have demonstrated that the implementation of complementary in situ characterization techniques is critical to understand film growth and interface processes, which play critical roles in film microstructures and properties. We are using uniquely integrated time of flight ion scattering and recoil spectroscopy (TOF-ISARS) and spectroscopic ellipsometry (SE) techniques to perform in situ, real-time studies of film growth processes in the high background gas pressure required to growth ferroelectric thin films. TOF-ISARS provides information on surface processes, while SE permits the investigation of buried interfaces as they are being formed. Recent studies on SrBi2Ta2O9 (SET) and BaxSr1-xTiO3 (BST) film growth and interface processes are discussed. © 2000 OPA (Overseas Publishers Association) N.V. Published by license under the Gordon and Breach Science Publishers imprint.
PB - Taylor and Francis Inc.
PY - 2000
SP - 1
EP - 12
T2 - Integrated Ferroelectrics
TI - Studies of ferroelectric heterostructure thin films and interfaces, via in situ analytical techniques
VL - 28
SN - 10584587
ER -