@article{33775,
  keywords = {Thin films, Perovskite, Electrodes, Electric properties, Ferroelectric devices, Lead compounds, Silicon wafers, Capacitors, Ferroelectric properties, Diffusion barrier layers, Data storage equipment, Polysilanes, Ferroelectric capacitor structures, High density ferroelectric memories, Polysilicon plug},
  author = {S Aggarwal and C Ganpule and I.G Jenkins and B Nagaraj and A Stanishevsky and J Melngailis and E Williams and Ramamoorthy Ramesh},
  title = {High density ferroelectric memories: Materials, processing and scaling},
  abstract = {A review is presented of approaches to integrate thin film Pb(Zr,Ti)O3-based ferroelectric capacitor structures on a filled poly-Si plug, which is a critical requirement for a high-density memory technology. Key materials issues relevant to the development of conducting diffusion barrier layers for integration of these materials on Si wafers are discussed. Specific attention in this paper is on the use of conducting perovskite oxide electrodes to contact the ferroelectric thin film. The second part of this review focuses on some novel materials that we have investigated for use as diffusion barriers. Finally, we present data on the scaling of ferroelectric properties with lateral dimensions of the capacitor. © 2000 OPA (Overseas Publishers Association) N.V. Published by license under the Gordon and Breach Science Publishers imprint.},
  year = {2000},
  journal = {Integrated Ferroelectrics},
  volume = {28},
  number = {1-4},
  pages = {213-225},
  publisher = {Taylor and Francis Inc.},
  issn = {10584587},
  doi = {10.1080/10584580008222233},
  note = {cited By 5},
  language = {eng},
}