%0 Journal Article
%K Thin films
%K Electric potential
%K Perovskite
%K Electrodes
%K Current density
%K Permittivity
%K Strontium compounds
%K Strontium titanate
%K Capacitance
%K Capacitors
%K Leakage currents
%K Barium titanate
%K Dynamic random access storage
%K Dielectric films
%K Poole-Frenkel mechanisms
%A B Nagaraj
%A T Sawhney
%A S Perusse
%A S Aggarwal
%A Ramamoorthy Ramesh
%A V.S Kaushik
%A S Zafar
%A R.E Jones
%A J.-H Lee
%A V Balu
%A J Lee
%B Applied Physics Letters
%D 1999
%G eng
%I American Institute of Physics Inc., Woodbury
%P 3194-3196
%R 10.1063/1.124104
%T (Ba,Sr)TiO3 thin films with conducting perovskite electrodes for dynamic random access memory applications
%V 74
%X The leakage current mechanism of (Ba,Sr)TiO3 capacitors were examined for dynamic random access memory applications. Leakage currents were measured in the temperature range 20-150 °C, and the data was analyzed for the various mechanisms. The extracted dielectric constant, corresponding to Poole-Frenkel mechanism, is in good agreement with the experimental value of the optical dielectric constant.