%0 Journal Article
%K deposition
%K lead
%K Electron energy loss spectroscopy
%K aluminum
%K polycrystalline
%K zirconium
%K integration
%K ferroelectricity
%K Ferroelectric devices
%K Ferroelectric capacitors
%K Ferroelectric films
%K Energy dissipation
%K Silicon wafers
%K Capacitors
%K Low Power
%K Bottom electrodes
%K Conductive films
%K Semiconducting lead compounds
%K Low temperatures
%K Amorphous materials
%K Semiconducting silicon compounds
%K Ferroelectric property
%K Silicon substrates
%K Sol-gel process
%K Barrier layers
%K Concentration of dissolved oxygen
%K Conducting barriers
%K Crystallinities
%K Deposition pressures
%K Diffusion barrier layers
%K High power density
%K Lead zirconate titanate thin films
%K Non-volatile ferroelectric memories
%K Pb(Zr
%K Ti)O
%K Power densities
%K PZT film
%K Si wafer
%K Silicon transistors
%K Sputtering conditions
%K Sputtering power
%K Amorphous films
%K Dissolved oxygen
%K Diffusion barriers
%A B.T Liu
%A K Maki
%A S Aggarwal
%A B Nagaraj
%A V Nagarajan
%A L Salamanca-Riba
%A Ramamoorthy Ramesh
%A A.M Dhote
%A O Auciello
%B Applied Physics Letters
%D 2002
%G eng
%P 3599-3601
%R 10.1063/1.1477281
%T Low-temperature integration of lead-based ferroelectric capacitors on Si with diffusion barrier layer
%V 80
%X Ferroelectric lead zirconate titanate thin films have been integrated on silicon substrates using Ti-Al-based conducting diffusion barriers produced by sputter deposition. The microstructure of the Ti-Al barrier layer was systematically altered through changes in the sputtering conditions, specifically the power density and deposition pressure. We find that the crystallinity of the Ti-Al film strongly correlates with sputtering power density and ambient i.e., it is amorphous at low power density and/or high deposition pressure, and polycrystalline at high power density and/or low deposition pressure. Electron energy loss spectroscopy studies demonstrate that the amorphous Ti-Al (a-Ti-Al) films contain a higher concentration of dissolved oxygen than crystalline Ti-Al. A low temperature sol-gel process has been used to prepare Pb(Zr,Ti)O3 PZT films at 450°C on conducting Si wafers with a-Ti-Al conducting barrier layer and La-Sr-Co-O top and bottom electrodes. The excellent ferroelectric properties obtained with the a-Ti-Al barrier provide a promising approach for integration of PZT-based capacitors with silicon transistor technology for the fabrication of nonvolatile ferroelectric memories. © 2002 American Institute of Physics.