(Ba,Sr)TiO3 thin films with conducting perovskite electrodes for dynamic random access memory applications

Publication Type	Journal Article

Authors	B Nagaraj T Sawhney S Perusse S Aggarwal Ramamoorthy Ramesh V.S Kaushik S Zafar R.E Jones J.-H Lee V Balu J Lee
DOI	10.1063/1.124104
Abstract	The leakage current mechanism of (Ba,Sr)TiO3 capacitors were examined for dynamic random access memory applications. Leakage currents were measured in the temperature range 20-150 °C, and the data was analyzed for the various mechanisms. The extracted dielectric constant, corresponding to Poole-Frenkel mechanism, is in good agreement with the experimental value of the optical dielectric constant.
Notes	cited By 64
Journal	Applied Physics Letters
Volume	74
Year of Publication	1999
Number	21
Pagination	3194-3196
Publisher	American Institute of Physics Inc., Woodbury
ISSN Number	00036951
Keywords	Thin films Electric potential Perovskite Electrodes Current density Permittivity Strontium compounds Strontium titanate Capacitance Capacitors Leakage currents Barium titanate Dynamic random access storage Dielectric films Poole-Frenkel mechanisms
Organizations	No Organization
Research Areas	Ramesh Lab
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