TY - JOUR
KW - Thin films
KW - Electric potential
KW - Perovskite
KW - Electrodes
KW - Current density
KW - Permittivity
KW - Strontium compounds
KW - Strontium titanate
KW - Capacitance
KW - Capacitors
KW - Leakage currents
KW - Barium titanate
KW - Dynamic random access storage
KW - Dielectric films
KW - Poole-Frenkel mechanisms
AU - B Nagaraj
AU - T Sawhney
AU - S Perusse
AU - S Aggarwal
AU - Ramamoorthy Ramesh
AU - V.S Kaushik
AU - S Zafar
AU - R.E Jones
AU - J.-H Lee
AU - V Balu
AU - J Lee
AB - The leakage current mechanism of (Ba,Sr)TiO3 capacitors were examined for dynamic random access memory applications. Leakage currents were measured in the temperature range 20-150 °C, and the data was analyzed for the various mechanisms. The extracted dielectric constant, corresponding to Poole-Frenkel mechanism, is in good agreement with the experimental value of the optical dielectric constant.
BT - Applied Physics Letters
DO - 10.1063/1.124104
LA - eng
M1 - 21
N1 - cited By 64
N2 - The leakage current mechanism of (Ba,Sr)TiO3 capacitors were examined for dynamic random access memory applications. Leakage currents were measured in the temperature range 20-150 °C, and the data was analyzed for the various mechanisms. The extracted dielectric constant, corresponding to Poole-Frenkel mechanism, is in good agreement with the experimental value of the optical dielectric constant.
PB - American Institute of Physics Inc., Woodbury
PY - 1999
SP - 3194
EP - 3196
T2 - Applied Physics Letters
TI - (Ba,Sr)TiO3 thin films with conducting perovskite electrodes for dynamic random access memory applications
VL - 74
SN - 00036951
ER -