@article{33875,
  author = {S Madhukar and S Aggarwal and A.M Dhote and Ramamoorthy Ramesh and A Krishnan and D Keeble and E Poindexter},
  title = {Effect of oxygen stoichiometry on the electrical properties of La0.5Sr0.5CoO3 electrodes},
  abstract = {We report on the metal-insulator transition of La0.5Sr0.5CoO3 thin films deposited by pulsed laser ablation on LaAlO3, substrates. The films were cooled in oxygen partial pressures between 760 and 10-5 Torr and electrical resistivity of the films was measured as a function of cooling oxygen pressure. La0.5Sr0.5CoO3 films changed from metallic to insulating behavior depending on their oxygen content. A defect model has been proposed to explain this transition and the change in conductivity is related to the change in the oxidation state of the cobalt ions. The model explains the relationship between oxygen partial pressure and electrical conductivity in La0.5Sr0.5CoO3, which describes the experimental dependence reasonably well. Positron annihilation studies were also done on the same set of samples and the S parameter was seen to increase by 8% from a fully oxygenated sample to a sample cooled in 10-5 Torr. © 1997 American Institute of Physics.},
  year = {1997},
  journal = {Journal of Applied Physics},
  volume = {81},
  number = {8},
  pages = {3543-3547},
  publisher = {American Institute of Physics Inc.},
  issn = {00218979},
  doi = {10.1063/1.364991},
  note = {cited By 102},
  language = {eng},
}