TY - JOUR
AU - B Yang
AU - S Aggarwal
AU - A.M Dhote
AU - T.K Song
AU - Ramamoorthy Ramesh
AU - J.S Lee
AB - A high density ferroelectric memory process flow requires the integration of conducting barrier layers to connect the drain of the pass-gate transistor to the bottom electrode of the ferroelectric stack. We are studying the effect of crystallinity of the TiN/Pt barrier layer with Si wafers on the ferroelectric properties of La0.5Sr0.5CoO3/Pb(Nb0.04Zr 0.28Ti0.08)O3/La0.5Sr 0.5CoO3 (LSCO/PNZT/LSCO) capacitors. Structural studies indicate complete phase purity (i.e., fully perovskite) in both epitaxial and polycrystalline materials. The polycrystalline capacitors show lower remnant polarization and coercive voltages. However, the retention, fatigue, and imprint characteristics are similar, indicating minimal influence of crystalline quality on the ferroelectric properties. © 1997 American Institute of Physics.
BT - Applied Physics Letters
DO - 10.1063/1.119536
LA - eng
M1 - 3
N1 - cited By 61
N2 - A high density ferroelectric memory process flow requires the integration of conducting barrier layers to connect the drain of the pass-gate transistor to the bottom electrode of the ferroelectric stack. We are studying the effect of crystallinity of the TiN/Pt barrier layer with Si wafers on the ferroelectric properties of La0.5Sr0.5CoO3/Pb(Nb0.04Zr 0.28Ti0.08)O3/La0.5Sr 0.5CoO3 (LSCO/PNZT/LSCO) capacitors. Structural studies indicate complete phase purity (i.e., fully perovskite) in both epitaxial and polycrystalline materials. The polycrystalline capacitors show lower remnant polarization and coercive voltages. However, the retention, fatigue, and imprint characteristics are similar, indicating minimal influence of crystalline quality on the ferroelectric properties. © 1997 American Institute of Physics.
PB - American Institute of Physics Inc.
PY - 1997
SP - 356
EP - 358
T2 - Applied Physics Letters
TI - La0.5Sr0.5CoO3/Pb(Nb0.04Zr 0.28Ti0.68)O3/La0.5Sr 0.5CoO3 thin film heterostructures on Si using TiN/Pt conducting barrier
VL - 71
SN - 00036951
ER -