TY - JOUR
KW - Reliability
KW - Pulsed laser deposition
KW - Oxides
KW - Ferroelectric materials
KW - Random access storage
KW - Ferroelectric devices
KW - Ferroelectric capacitors
KW - Capacitors
KW - Pulsed laser applications
KW - Capacitor storage
AU - W Wei
AU - A.M Dhote
AU - Ramamoorthy Ramesh
AU - S Sauvage
AB - Polycrystalline LSCO/PLZT/LSCO heterostructures have been grown on Pt/Ti/SiO2/Si substrates by Pulsed Laser Deposition (PLD). Combined Pt/LSCO electrodes were formed using photolithography lift off processes to fabricate the heterostructures into prototype ferroelectric memory capacitors. Ferroelectric properties and reliability, characteristics (fatigue, logic state retention and imprint) of the polycrystalline LSCO/PLZT/LSCO capacitors were evaluated both at room temperature and 100°C. and were compared with that of epitaxial and oriented LSCO/PLZT/LSCO heterostructure capacitors. Fatigue free results were achieved up to 1011 switching cycles at both temperatures, and the retention and imprint tests also show that the polycrystalline LSCO/PLZT/LSCO heterostructure is suitable for nonvolatile random access memory applications.
BT - Integrated Ferroelectrics
DO - 10.1080/10584589608225748
LA - eng
M1 - 1
N1 - cited By 0
N2 - Polycrystalline LSCO/PLZT/LSCO heterostructures have been grown on Pt/Ti/SiO2/Si substrates by Pulsed Laser Deposition (PLD). Combined Pt/LSCO electrodes were formed using photolithography lift off processes to fabricate the heterostructures into prototype ferroelectric memory capacitors. Ferroelectric properties and reliability, characteristics (fatigue, logic state retention and imprint) of the polycrystalline LSCO/PLZT/LSCO capacitors were evaluated both at room temperature and 100°C. and were compared with that of epitaxial and oriented LSCO/PLZT/LSCO heterostructure capacitors. Fatigue free results were achieved up to 1011 switching cycles at both temperatures, and the retention and imprint tests also show that the polycrystalline LSCO/PLZT/LSCO heterostructure is suitable for nonvolatile random access memory applications.
PB - Taylor and Francis Inc.
PY - 1996
SP - 53
EP - 62
T2 - Integrated Ferroelectrics
TI - Reliability studies of polycrystalline La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O capacitors on silicon
VL - 12
SN - 10584587
ER -