TY - JOUR
KW - Yttrium compounds
KW - Lattice constants
KW - Silicon
KW - Yttria stabilized zirconia
KW - Lanthanum compounds
KW - Epitaxial growth
KW - Lanthanum
KW - Ferroelectric devices
KW - Lead compounds
KW - Capacitors
KW - Lead zirconate titanate (PZT)
KW - Coercive voltage
KW - Dielectric films
KW - Lanthanum strontium cobaltite
AU - S Aggarwal
AU - A.S Prakash
AU - T.K Song
AU - S Sadashivan
AU - A.M Dhote
AU - B Yang
AU - Ramamoorthy Ramesh
AU - Y Kisler
AU - S.E Bernacki
AB - We report on novel, low voltage properties of ferroelectric lanthanum doped lead zirconate titanate (PLZT) capacitors. These PLZT ferroelectric films sandwiched between lanthanum strontium cobaltite, (La0.5Sr0.5)CoO3(LSCO) electrodes were epitaxially grown on yttria stabilized zirconia (YSZ) buffered Si, using a bismuth titanate template. These epitaxial capacitors exhibit much lower switching voltages (∼0.5 V) compared to what has been reported on other PZT systems. Ferroelectric testing shows excellent fatigue, retention and imprint properties. Pulse width dependent measurements show that the low voltage performance is possible at widths less than 1 μsec. The dramatic change in the switching behavior is tentatively attributed to the reduction in the c-axis lattice parameter (due to La substitution) and the consequent absence of 90° domain walls.
BT - Integrated Ferroelectrics
DO - 10.1080/10584589808012702
LA - eng
M1 - 1-4
N1 - cited By 5
N2 - We report on novel, low voltage properties of ferroelectric lanthanum doped lead zirconate titanate (PLZT) capacitors. These PLZT ferroelectric films sandwiched between lanthanum strontium cobaltite, (La0.5Sr0.5)CoO3(LSCO) electrodes were epitaxially grown on yttria stabilized zirconia (YSZ) buffered Si, using a bismuth titanate template. These epitaxial capacitors exhibit much lower switching voltages (∼0.5 V) compared to what has been reported on other PZT systems. Ferroelectric testing shows excellent fatigue, retention and imprint properties. Pulse width dependent measurements show that the low voltage performance is possible at widths less than 1 μsec. The dramatic change in the switching behavior is tentatively attributed to the reduction in the c-axis lattice parameter (due to La substitution) and the consequent absence of 90° domain walls.
PB - Taylor and Francis Inc.
PY - 1998
SP - 159
EP - 177
T2 - Integrated Ferroelectrics
TI - Lead based ferroelectric capacitors for low voltage non-volatile memory applications
VL - 19
SN - 10584587
ER -