@article{33732,
  author = {A.M Dhote and O Auciello and D.M Gruen and Ramamoorthy Ramesh},
  title = {Studies of thin film growth and oxidation processes for conductive Ti-Al diffusion barrier layers via in situ surface sensitive analytical techniques},
  abstract = {Conducting diffusion barrier layers play a critical role in high-density memory integration. We recently demonstrated that Ti-Al can be used as a diffusion barrier layer for the integration of ferroelectric capacitors with complementary metal-oxide semiconductor devices for the fabrication of nonvolatile ferroelectric random access memories (NVFRAMs). Here, we discuss results from systematic studies designed to understand Ti-Al film growth and oxidation processes using in situ ion beam sputter deposition in conjunction with complementary in situ atomic layer-resolution mass spectroscopy of recoil ion (MSRI) and surface sensitive x-ray photoelectron spectroscopy (XPS). The concurrent MSRI/XPS analysis revealed that amorphous Ti-Al layers produced by tailored sputter-deposition methods are resistant to oxidation to at least 600 °C, and that oxidation occurs only when the a-Ti-Al layers are exposed to oxygen at >600 °C, via the segregation of Ti species to the surface and TiO2 formation. The a-Ti-Al layers discussed in this letter could be used in the double functionality of a bottom electrode/diffusion barrier for the integration of ferroelectric capacitors with Si substrates for the fabrication of NVFRAMs and other devices. © 2001 American Institute of Physics.},
  year = {2001},
  journal = {Applied Physics Letters},
  volume = {79},
  number = {6},
  pages = {800-802},
  issn = {00036951},
  doi = {10.1063/1.1391237},
  note = {cited By 18},
  language = {eng},
}