TY - JOUR
AU - S Aggarwal
AU - A.M Dhote
AU - Ramamoorthy Ramesh
AU - W.L Warren
AU - G.E Pike
AU - D Dimos
AU - M.V Raymond
AU - B.A Tuttle
AU - J .T Jr
AB - We report on the thermally activated hysteresis relaxation effects in (La,Sr)CoO3/ (Pb,La)(Zr,Ti)O3/(La,Sr)CoO3 thin film ferroelectric capacitors. Films cooled in oxygen deficient ambients exhibit a marked voltage offset in the hysteresis loops. Upon the application of a dc bias voltage or unidirectional pulses of the same polarity as the offset, the loops become more symmetric. Subsequently, holding the capacitors in the original preferred polarization state leads to a relaxation of the hysteresis loop towards its original voltage offset condition. The relaxation process is described by a stretched exponential and is thermally activated. © 1996 American Institute of Physics.
BT - Applied Physics Letters
DO - 10.1063/1.117732
LA - eng
M1 - 17
N1 - cited By 50
N2 - We report on the thermally activated hysteresis relaxation effects in (La,Sr)CoO3/ (Pb,La)(Zr,Ti)O3/(La,Sr)CoO3 thin film ferroelectric capacitors. Films cooled in oxygen deficient ambients exhibit a marked voltage offset in the hysteresis loops. Upon the application of a dc bias voltage or unidirectional pulses of the same polarity as the offset, the loops become more symmetric. Subsequently, holding the capacitors in the original preferred polarization state leads to a relaxation of the hysteresis loop towards its original voltage offset condition. The relaxation process is described by a stretched exponential and is thermally activated. © 1996 American Institute of Physics.
PB - American Institute of Physics Inc.
PY - 1996
SP - 2540
EP - 2542
T2 - Applied Physics Letters
TI - Hysteresis relaxation in (Pb,La)(Zr,Ti)O3 thin film capacitors with (La,Sr)CoO3 electrodes
VL - 69
SN - 00036951
ER -