@article{33894,
  keywords = {thin films, defects, Polarization, Ferroelectric materials, Doping (additives), Ferroelectric devices, Lead compounds, Ferroelectric capacitors, Capacitors, Composition effects, Compositional dependent oxygen vacancy density, Ferroelectric memory devices, Imprint, Oxygen vacancy related defect dipole, Polarization voltage characteristics, Stress induced voltage shift, Thermal induced voltage shift, Voltage offset},
  author = {W.L Warren and B.A Tuttle and D Dimos and G.E Pike and H.N Al-Shareef and Ramamoorthy Ramesh and J .T Jr},
  title = {Imprint in ferroelectric capacitors},
  abstract = {We show that voltage offsets in the polarization-voltage characteristics of Pb(Zr, Ti)O3 capacitors can lead to imprint in ferroelectric memory devices. The thermal-induced voltage shifts (internal bias field) are in part attributed to the role of oxygen vacancy-related defect dipoles throughout the film. In support of this, it is found that donor doping at the Ti(Zr) sites reduces the thermally-induced voltage shifts. The stress-induced voltage shifts are found to be dependent on the Zr/Ti cation ratio. This compositional dependence is explained by considering the role of deep bulk Ti3+ centers and/or a compositional dependent oxygen vacancy density.},
  year = {1996},
  journal = {Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers},
  volume = {35},
  number = {2 SUPPL. B},
  pages = {1521-1524},
  issn = {00214922},
  note = {cited By 99},
  language = {eng},
}