TY - JOUR
KW - Thin films
KW - Defects
KW - Polarization
KW - Ferroelectric materials
KW - Doping (additives)
KW - Ferroelectric devices
KW - Lead compounds
KW - Ferroelectric capacitors
KW - Capacitors
KW - Composition effects
KW - Compositional dependent oxygen vacancy density
KW - Ferroelectric memory devices
KW - Imprint
KW - Oxygen vacancy related defect dipole
KW - Polarization voltage characteristics
KW - Stress-induced voltage shift
KW - Thermal induced voltage shift
KW - Voltage offset
AU - W.L Warren
AU - B.A Tuttle
AU - D Dimos
AU - G.E Pike
AU - H.N Al-Shareef
AU - Ramamoorthy Ramesh
AU - J .T Jr
AB - We show that voltage offsets in the polarization-voltage characteristics of Pb(Zr, Ti)O3 capacitors can lead to imprint in ferroelectric memory devices. The thermal-induced voltage shifts (internal bias field) are in part attributed to the role of oxygen vacancy-related defect dipoles throughout the film. In support of this, it is found that donor doping at the Ti(Zr) sites reduces the thermally-induced voltage shifts. The stress-induced voltage shifts are found to be dependent on the Zr/Ti cation ratio. This compositional dependence is explained by considering the role of deep bulk Ti3+ centers and/or a compositional dependent oxygen vacancy density.
BT - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
LA - eng
M1 - 2 SUPPL. B
N1 - cited By 99
N2 - We show that voltage offsets in the polarization-voltage characteristics of Pb(Zr, Ti)O3 capacitors can lead to imprint in ferroelectric memory devices. The thermal-induced voltage shifts (internal bias field) are in part attributed to the role of oxygen vacancy-related defect dipoles throughout the film. In support of this, it is found that donor doping at the Ti(Zr) sites reduces the thermally-induced voltage shifts. The stress-induced voltage shifts are found to be dependent on the Zr/Ti cation ratio. This compositional dependence is explained by considering the role of deep bulk Ti3+ centers and/or a compositional dependent oxygen vacancy density.
PY - 1996
SP - 1521
EP - 1524
T2 - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
TI - Imprint in ferroelectric capacitors
VL - 35
SN - 00214922
ER -