@article{33710,
  keywords = {transmission electron microscopy, Perovskite, pulse width, cobalt compounds, Ferroelectric materials, Epitaxial growth, ferroelectricity, Ferroelectric capacitors, Silicon wafers, Epitaxial ferroelectric, SrTiO, Low temperatures, Semiconducting silicon compounds, X ray diffraction analysis, Capacitive couplings, Electrical response, Ferroelectric layers, Perovskite layers, PZT, Silicon substrates, Template layers, TiO, Sol-gel process},
  author = {B.T Liu and K Maki and Y So and V Nagarajan and Ramamoorthy Ramesh and J Lettieri and J.H Haeni and D.G Schlom and W Tian and X.Q Pan and F.J Walker and R.A McKee},
  title = {Epitaxial La-doped SrTiO3 on silicon: A conductive template for epitaxial ferroelectrics on silicon},
  abstract = {Use of an epitaxial conducting template has enabled the integration of epitaxial ferroelectric perovskites on silicon. The conducting template layer, LaxSr1-xTiO3 (LSTO), deposited onto (001) silicon wafers by molecular-beam epitaxy is then used to seed 001-oriented epitaxial perovskite layers. We illustrate the viability of this approach using PbZr0.4Ti0.6O3 (PZT) as the ferroelectric layer contacted with conducting perovskite La0.5Sr0.5CoO 3 (LSCO) electrodes. An important innovation that further facilitates this approach is the use of a low-temperature (450°C) sol-gel process to crystallize the entire ferroelectric stack. Both transmission electron microscopy and x-ray diffraction analysis indicate the LSCO/PZT/LSCO/LSTO/Si heterostructures are epitaxial. The electrical response of ferroelectric capacitors (for pulse widths down to 1 μs) measured via the underlying silicon substrate is identical to measurements made using conventional capacitive coupling method, indicating the viability of this approach. © 2002 American Institute of Physics.},
  year = {2002},
  journal = {Applied Physics Letters},
  volume = {80},
  number = {25},
  pages = {4801-4803},
  issn = {00036951},
  doi = {10.1063/1.1484552},
  note = {cited By 57},
  language = {eng},
}