TY - JOUR
KW - Nanostructured materials
KW - Atomic force microscopy
KW - Ferroelectricity
KW - Dielectric properties
KW - Piezoelectricity
KW - Ferroelectric capacitors
KW - Capacitors
KW - Piezoresponse
KW - Nanocapacitors
AU - A Petraru
AU - V Nagarajan
AU - H Kohlstedt
AU - Ramamoorthy Ramesh
AU - D.G Schlom
AU - R Waser
AB - We present a sensitive method to simultaneously acquire the C(V) characteristics and piezoresponse of submicron size ferroelectric capacitors using an Atomic Force Microscope (AFM). Model Pt/(La0.5,Sr 0.5)CoO3/ PbZr0.4Ti0.6 O 3/(La0.5,Sr0.5)CoO3/La:SrTiO 3/Si nanocapacitors were fabricated by focused ion beam milling from 100 μm2 down to 0.04 μm2. With this AFM based capacitance measurement technique we show clear "double-humped" C(V) for all sizes with no significant change in the peak value of the εr down to capacitors with the smallest area of 0.04 μm 2. The smallest capacitance measured is only of the order a few femtofarads, demonstrating the high sensitivity of the technique. Simultaneously, the piezoelectric response is recorded for each measurement, thus the technique facilitates simultaneous piezoresponse and dielectric characterization of ferroelectric memory devices.
BT - Applied Physics A: Materials Science and Processing
DO - 10.1007/s00339-006-3592-2
LA - eng
M1 - 1-2
N1 - cited By 8
N2 - We present a sensitive method to simultaneously acquire the C(V) characteristics and piezoresponse of submicron size ferroelectric capacitors using an Atomic Force Microscope (AFM). Model Pt/(La0.5,Sr 0.5)CoO3/ PbZr0.4Ti0.6 O 3/(La0.5,Sr0.5)CoO3/La:SrTiO 3/Si nanocapacitors were fabricated by focused ion beam milling from 100 μm2 down to 0.04 μm2. With this AFM based capacitance measurement technique we show clear "double-humped" C(V) for all sizes with no significant change in the peak value of the εr down to capacitors with the smallest area of 0.04 μm 2. The smallest capacitance measured is only of the order a few femtofarads, demonstrating the high sensitivity of the technique. Simultaneously, the piezoelectric response is recorded for each measurement, thus the technique facilitates simultaneous piezoresponse and dielectric characterization of ferroelectric memory devices.
PY - 2006
SP - 67
EP - 71
T2 - Applied Physics A: Materials Science and Processing
TI - Simultaneous measurement of the piezoelectric and dielectric response of nanoscale ferroelectric capacitors by an atomic force microscopy based approach
VL - 84
SN - 09478396
ER -