TY - JOUR
KW - Transmission electron microscopy
KW - Perovskite
KW - Pulse width
KW - Cobalt compounds
KW - Ferroelectric materials
KW - Epitaxial growth
KW - Ferroelectricity
KW - Ferroelectric capacitors
KW - Silicon wafers
KW - Epitaxial ferroelectric
KW - SrTiO
KW - Low temperatures
KW - Semiconducting silicon compounds
KW - X-ray diffraction analysis
KW - Capacitive couplings
KW - Electrical response
KW - Ferroelectric layers
KW - Perovskite layers
KW - PZT
KW - Silicon substrates
KW - Template layers
KW - TiO
KW - Sol-gel process
AU - B.T Liu
AU - K Maki
AU - Y So
AU - V Nagarajan
AU - Ramamoorthy Ramesh
AU - J Lettieri
AU - J.H Haeni
AU - D.G Schlom
AU - W Tian
AU - X.Q Pan
AU - F.J Walker
AU - R.A McKee
AB - Use of an epitaxial conducting template has enabled the integration of epitaxial ferroelectric perovskites on silicon. The conducting template layer, LaxSr1-xTiO3 (LSTO), deposited onto (001) silicon wafers by molecular-beam epitaxy is then used to seed 001-oriented epitaxial perovskite layers. We illustrate the viability of this approach using PbZr0.4Ti0.6O3 (PZT) as the ferroelectric layer contacted with conducting perovskite La0.5Sr0.5CoO 3 (LSCO) electrodes. An important innovation that further facilitates this approach is the use of a low-temperature (450°C) sol-gel process to crystallize the entire ferroelectric stack. Both transmission electron microscopy and x-ray diffraction analysis indicate the LSCO/PZT/LSCO/LSTO/Si heterostructures are epitaxial. The electrical response of ferroelectric capacitors (for pulse widths down to 1 μs) measured via the underlying silicon substrate is identical to measurements made using conventional capacitive coupling method, indicating the viability of this approach. © 2002 American Institute of Physics.
BT - Applied Physics Letters
DO - 10.1063/1.1484552
LA - eng
M1 - 25
N1 - cited By 57
N2 - Use of an epitaxial conducting template has enabled the integration of epitaxial ferroelectric perovskites on silicon. The conducting template layer, LaxSr1-xTiO3 (LSTO), deposited onto (001) silicon wafers by molecular-beam epitaxy is then used to seed 001-oriented epitaxial perovskite layers. We illustrate the viability of this approach using PbZr0.4Ti0.6O3 (PZT) as the ferroelectric layer contacted with conducting perovskite La0.5Sr0.5CoO 3 (LSCO) electrodes. An important innovation that further facilitates this approach is the use of a low-temperature (450°C) sol-gel process to crystallize the entire ferroelectric stack. Both transmission electron microscopy and x-ray diffraction analysis indicate the LSCO/PZT/LSCO/LSTO/Si heterostructures are epitaxial. The electrical response of ferroelectric capacitors (for pulse widths down to 1 μs) measured via the underlying silicon substrate is identical to measurements made using conventional capacitive coupling method, indicating the viability of this approach. © 2002 American Institute of Physics.
PY - 2002
SP - 4801
EP - 4803
T2 - Applied Physics Letters
TI - Epitaxial La-doped SrTiO3 on silicon: A conductive template for epitaxial ferroelectrics on silicon
VL - 80
SN - 00036951
ER -