S Aggarwal

Publications

Viewing 25 of 77 publications

1999

Aggarwal, S, I.G Jenkins, B Nagaraj, C.J Kerr, C Canedy, Ramamoorthy Ramesh, G Velasquez, L Boyer, and J .T Jr. "Switching properties of Pb(Nb, Zr,Ti)O3 capacitors using SrRuO3 electrodes." Applied Physics Letters 75 (1999) 1787–1789.

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Aggarwal, S, S Madhukar, B Nagaraj, I.G Jenkins, Ramamoorthy Ramesh, L Boyer, and J .T Jr. "Can lead nonstoichiometry influence ferroelectric properties of Pb(Zr,Ti)O3 thin films?." Applied Physics Letters 75 (1999) 716–718.

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Ganpule, C.S, A Stanishevsky, Q Su, S Aggarwal, J Melngailis, E Williams, and Ramamoorthy Ramesh. "Scaling of ferroelectric properties in thin films." Applied Physics Letters 75 (1999) 409–411.

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1998

Jenkins, I.G, T.K Song, S Madhukar, A.S Prakash, S Aggarwal, and Ramamoorthy Ramesh. "Dynamics of polarization loss in (Pb, La)(Zr, Ti)O3 thin film capacitors." Applied Physics Letters 72 (1998) 3300–3302.

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Bernhard, J.M, A Rouse, E.D Sosa, D.E Golden, B.R Chalamala, S Aggarwal, B.E Gnade, and Ramamoorthy Ramesh. "Photoelectric workfunctions of metals oxide films and emission characteristics of molybdenum emitter tips with oxide coatings." Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. IEEE, Piscataway, NJ, United States, 1998. 32–33.

Keeble, D.J, A Krishnan, T Friessnegg, B Nielsen, S Madhukar, S Aggarwal, Ramamoorthy Ramesh, and E.H Poindexter. "Vacancy defects in thin-film La0.5Sr0.5CoO3-δ observed by positron annihilation." Applied Physics Letters 73 (1998) 508–510.

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Aggarwal, S, S.R Perusse, C.W Tipton, Ramamoorthy Ramesh, H.D Drew, T Venkatesan, D.B Romero, V.B Podobedov, and A Weber. "Effect of hydrogen on Pb(Zr,Ti)O3-based ferroelectric capacitors." Applied Physics Letters 73 (1998) 1973–1975.

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Aggarwal, S, S.R Perusse, S Madhukar, T.K Song, C.L Canedy, Ramamoorthy Ramesh, S Choopun, R.P Sharma, T Venkatesan, and S.M Green. "Rapid thermal annealing of oxide electrodes for nonvolatile ferroelectric memory structures." Journal of Electroceramics 2 (1998) 171–179.

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Stanishevsky, A, S Aggarwal, A.S Prakash, J Melngailis, and Ramamoorthy Ramesh. "Focused ion-beam patterning of nanoscale ferroelectric capacitors." Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 16 (1998) 3899–3902.

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Alpay, S.P, A.S Prakash, S Aggarwal, P Shuk, M Greenblatt, Ramamoorthy Ramesh, and A.L Roytburd. "Polydomain formation in epitaxial PbTiO3 films." Scripta Materialia 39 (1998) 1435–1441.

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Sadashivan, S, S Aggarwal, T.K Song, Ramamoorthy Ramesh, J .T Jr, B.A Tuttle, W.L Warren, and D Dimos. "Evaluation of imprint in fully integrated (La,Sr)CoO3/Pb(Nb,Zr,Ti)O3/(La,Sr)CoO3 ferroelectric capacitors." Journal of Applied Physics 83 (1998) 2165–2171.

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Aggarwal, S, and Ramamoorthy Ramesh. "Point defect chemistry of metal oxide heterostructures." Annual Review of Materials Science 28 (1998) 463–499.

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Gruverman, A, S.A Prakash, S Aggarwal, Ramamoorthy Ramesh, O Auciello, and H Tokumoto. "Nanoscale investigation of polarization retention loss in ferroelectric thin films via scanning force microscopy." Materials Research Society Symposium - Proceedings. Vol. 493. MRS, Warrendale, PA, United States, 1998. 53–58.

Auciello, O, A Gruverman, H Tokumoto, S.A Prakash, S Aggarwal, and Ramamoorthy Ramesh. "Nanoscale scanning force imaging of polarization phenomena in ferroelectric thin films." MRS Bulletin 23 (1998) 33–41.

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Li, H, B Yang, A Dhote, S Aggarwal, L Salamanca-Riba, and Ramamoorthy Ramesh. "Microstructure investigations and structure-property correlations in ferroelectric thin-film capacitors." Materials Research Society Symposium - Proceedings. Vol. 493. MRS, Warrendale, PA, United States, 1998. 171–176.

Alpay, S.P, A.S Prakash, S Aggarwal, Ramamoorthy Ramesh, A.L Roytburd, P Shuk, and M Greenblatt. "Polydomain structure of epitaxial PbTiO3 films on MgO." Materials Research Society Symposium - Proceedings. Vol. 493. MRS, Warrendale, PA, United States, 1998. 111–116.

Song, T.K, J Ahn, B Yang, S Aggarwal, and Ramamoorthy Ramesh. "Pulse width dependent activation voltage measurements of ferroelectric (Pb,La)(Zr,Ti)O3 thin film capacitors for nonvolatile memories." Journal of the Korean Physical Society 32 (1998) S1721-S1723.

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Aggarwal, S, A.S Prakash, T.K Song, S Sadashivan, A.M Dhote, B Yang, Ramamoorthy Ramesh, Y Kisler, and S.E Bernacki. "Lead based ferroelectric capacitors for low voltage non-volatile memory applications." Integrated Ferroelectrics 19 (1998) 159–177.

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Friessnegg, T, S Aggarwal, B Nielsen, Ramamoorthy Ramesh, D.J Keeble, and E.H Poindexter. "Investigation of vacancy-related defects in (Pb,La)(Zr,Ti)O3 thin films using positron annihilation." IEEE International Symposium on Applications of Ferroelectrics. IEEE, Piscataway, NJ, United States, 1998. 147–150.

Song, T.K, S Aggarwal, Y Gallais, B Nagaraj, Ramamoorthy Ramesh, and J .T Jr. "Activation fields in ferroelectric thin film capacitors: Area dependence." Applied Physics Letters 73 (1998) 3366–3368.

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1997

Keeble, D.J, S Madhukar, B Nielsen, A Krishnan, P Asoka-Kumar, S Aggarwal, Ramamoorthy Ramesh, and E.H Poindexter. "Vacancy related defects in La0.5Sr0.5CoO3-δ thin films." Materials Research Society Symposium - Proceedings. Vol. 477. MRS, Warrendale, PA, United States, 1997. 229–233.

Song, T.K, S Aggarwal, A.S Prakash, B Yang, and Ramamoorthy Ramesh. "Activation field of ferroelectric (Pb,La)(Zr,Ti)O3 thin film capacitors." Applied Physics Letters 71 (1997) 2211–2213.

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Yang, B, S Aggarwal, A.M Dhote, T.K Song, Ramamoorthy Ramesh, and J.S Lee. "La0.5Sr0.5CoO3/Pb(Nb0.04Zr 0.28Ti0.68)O3/La0.5Sr 0.5CoO3 thin film heterostructures on Si using TiN/Pt conducting barrier." Applied Physics Letters 71 (1997) 356–358.

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Madhukar, S, S Aggarwal, A.M Dhote, Ramamoorthy Ramesh, A Krishnan, D Keeble, and E Poindexter. "Effect of oxygen stoichiometry on the electrical properties of La0.5Sr0.5CoO3 electrodes." Journal of Applied Physics 81 (1997) 3543–3547.

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Yang, B, T.K Song, S Aggarwal, and Ramamoorthy Ramesh. "Low voltage performance of Pb(Zr, Ti)O3 capacitors through donor doping." Applied Physics Letters 71 (1997) 3578–3580.

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