TY - JOUR
AU - T.K Song
AU - S Aggarwal
AU - A.S Prakash
AU - B Yang
AU - Ramamoorthy Ramesh
AB - We report results on the activation field and frequency dependence of the coercive voltage in epitaxial ferroelectric thin film capacitors. Frequency dependent hysteresis loops and pulse width dependent polarization of epitaxial La0.5Sr0.5CoO3/(Pb,La)(Zr,Ti)O 3/La0.5Sr0.5CoO3 capacitor structures were measured as a function of La content. The coercive voltages and their frequency dependence vary systematically with increasing La content. We show that the activation field for polarization reversal is directly related to the c/a ratio (tetragonality ratio) of the ferroelectric layer. A larger c/a ratio leads to a larger field to activate the motion of domain walls through the lattice. An important consequence of a larger activation field is a stronger pulse width dependence of the pulse switched polarization. © 1997 American Institute of Physics.
BT - Applied Physics Letters
DO - 10.1063/1.119383
LA - eng
M1 - 15
N1 - cited By 52
N2 - We report results on the activation field and frequency dependence of the coercive voltage in epitaxial ferroelectric thin film capacitors. Frequency dependent hysteresis loops and pulse width dependent polarization of epitaxial La0.5Sr0.5CoO3/(Pb,La)(Zr,Ti)O 3/La0.5Sr0.5CoO3 capacitor structures were measured as a function of La content. The coercive voltages and their frequency dependence vary systematically with increasing La content. We show that the activation field for polarization reversal is directly related to the c/a ratio (tetragonality ratio) of the ferroelectric layer. A larger c/a ratio leads to a larger field to activate the motion of domain walls through the lattice. An important consequence of a larger activation field is a stronger pulse width dependence of the pulse switched polarization. © 1997 American Institute of Physics.
PB - American Institute of Physics Inc.
PY - 1997
SP - 2211
EP - 2213
T2 - Applied Physics Letters
TI - Activation field of ferroelectric (Pb,La)(Zr,Ti)O3 thin film capacitors
VL - 71
SN - 00036951
ER -