@article{33860,
  author = {B Yang and T.K Song and S Aggarwal and Ramamoorthy Ramesh},
  title = {Low voltage performance of Pb(Zr, Ti)O3 capacitors through donor doping},
  abstract = {We report low voltage (1.5-3 V) performance of ferroelectric Pb(Zr,Ti)O3 based capacitors. La substitution up to 10% was performed to systematically lower the coercive and saturation voltages of epitaxial ferroelectric capacitors grown on Si using a (Ti0.9Al0.1)N/Pt conducting barrier composite. Ferroelectric capacitors substituted with 10% La show significantly lower coercive voltage compared to capacitors with 0% and 3% La. This is attributed to a systematic decrease in the tetragonality (i.e., c/a ratio) of the ferroelectric phase. Furthermore, the samples doped with 10% La showed dramatically better retention and pulse width dependent polarization compared to the capacitors with 0% and 3% La. These capacitors show promise as storage elements in low power high density memory architectures. © 1997 American Institute of Physics.},
  year = {1997},
  journal = {Applied Physics Letters},
  volume = {71},
  number = {24},
  pages = {3578-3580},
  publisher = {American Institute of Physics Inc.},
  issn = {00036951},
  doi = {10.1063/1.120396},
  note = {cited By 30},
  language = {eng},
}