Point defect chemistry of metal oxide heterostructures

Publication Type
Journal Article
Authors
DOI
10.1146/annurev.matsci.28.1.463
Abstract
This article reviews the defect chemistry of perovskite ferroelectric oxides such as barium titanate and lead zirconate titanate. Such metal oxides are being considered for a wide range of applications that include nonvolatile memories and dynamic random access memories. Time-dependent degradation of these devices is controlled at least in part by point defects, which are determined by the defect chemistry of the material. The role of point defects on Pb(Zr,Ti)O3 thin film device properties such as fatigue, switching, polarization relaxation and imprint is discussed.
Notes
cited By 78
Journal
Annual Review of Materials Science
Volume
28
Year of Publication
1998
Number
1
Pagination
463-499
Publisher
Annual Reviews Inc.
ISSN Number
00846600
Keywords
Research Areas
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