TY - JOUR
KW - Perovskite
KW - Oxides
KW - Polarization
KW - Ferroelectric materials
KW - Thin film devices
KW - MOS devices
KW - Heterojunctions
KW - Lead compounds
KW - Lead zirconate titanate (PZT)
KW - Point defects
KW - Barium titanate
KW - Relaxation processes
KW - Electric conductivity of solids
KW - Fatigue of materials
AU - S Aggarwal
AU - Ramamoorthy Ramesh
AB - This article reviews the defect chemistry of perovskite ferroelectric oxides such as barium titanate and lead zirconate titanate. Such metal oxides are being considered for a wide range of applications that include nonvolatile memories and dynamic random access memories. Time-dependent degradation of these devices is controlled at least in part by point defects, which are determined by the defect chemistry of the material. The role of point defects on Pb(Zr,Ti)O3 thin film device properties such as fatigue, switching, polarization relaxation and imprint is discussed.
BT - Annual Review of Materials Science
DO - 10.1146/annurev.matsci.28.1.463
LA - eng
M1 - 1
N1 - cited By 78
N2 - This article reviews the defect chemistry of perovskite ferroelectric oxides such as barium titanate and lead zirconate titanate. Such metal oxides are being considered for a wide range of applications that include nonvolatile memories and dynamic random access memories. Time-dependent degradation of these devices is controlled at least in part by point defects, which are determined by the defect chemistry of the material. The role of point defects on Pb(Zr,Ti)O3 thin film device properties such as fatigue, switching, polarization relaxation and imprint is discussed.
PB - Annual Reviews Inc.
PY - 1998
SP - 463
EP - 499
T2 - Annual Review of Materials Science
TI - Point defect chemistry of metal oxide heterostructures
VL - 28
SN - 00846600
ER -