Non-volatile storage

Dhote, A.M, S Madhukar, D Young, T Venkatesan, Ramamoorthy Ramesh, C.M Cotell, and J.M Benedetto. "Low temperature growth and reliability of ferroelectric memory cell integrated on Si with conducting barrier stack." Journal of Materials Research 12 (1997) 1589–1594.

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Auciello, O, and Ramamoorthy Ramesh. "Laser-ablation deposition and characterization of ferroelectric capacitors for nonvolatile memories." MRS Bulletin 21 (1996) 31–36.

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Ko, C, Y Lee, Y H Chen, J Suh, D Fu, A Suslu, S Lee, J.D Clarkson, H.S Choe, S Tongay, Ramamoorthy Ramesh, and J Wu. "Ferroelectrically gated atomically thin transition-metal dichalcogenides as nonvolatile memory." Advanced Materials 28 (2016) 2923–2930.

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Polking, M.J, A.P Alivisatos, and Ramamoorthy Ramesh. "Synthesis, physics, and applications of ferroelectric nanomaterials." MRS Communications 5 (2015) 27–44.

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Schrott, A.G, J.A Misewich, V Nagarajan, and Ramamoorthy Ramesh. "Ferroelectric field-effect transistor with a SrRuxTi1-xO3 channel." Applied Physics Letters 82 (2003) 4770–4772.

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Schmitz, T, K Prume, S Tiedke, A Roelofs, T Schneller, U Kall, M Grossmann, R Waser, C Ganpule, A Stanishefsky, and Ramamoorthy Ramesh. "Electrical measurements on capacitor sizes in the submicron regime for the characterization of real memory cell capacitors." Integrated Ferroelectrics. Vol. 37. 2001. 163–172.

Ramesh, Ramamoorthy, S Aggarwal, and O Auciello. "Science and technology of ferroelectric films and heterostructures for non-volatile ferroelectric memories." Materials Science and Engineering: R: Reports 32 (2001) 191–236.

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Ramesh, Ramamoorthy. "Process integration of PZT thin films with oxide electrodes for high density nonvolatile memories." Integrated Ferroelectrics 20 (1998) 69.

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Auciello, O, J.F Scott, and Ramamoorthy Ramesh. "The physics of ferroelectric memories." Physics Today 51 (1998) 22–27.

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Auciello, O, C.M Foster, and Ramamoorthy Ramesh. "Processing technologies for ferroelectric thin films and heterostructures." Annual Review of Materials Science 28 (1998) 501–531.

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