%0 Journal Article
%K Thin films
%K Ferroelectric materials
%K Ferroelectricity
%K Non-volatile memory
%K Ferroelectric films
%K Transition metals
%K Ferroelectric thin films
%K Field effect transistors
%K Non-volatile storage
%K Memory performance
%K Optical memory effect
%K Thin film ferroelectrics
%K Transition metal dichalcogenides
%A C Ko
%A Y Lee
%A Y H Chen
%A J Suh
%A D Fu
%A A Suslu
%A S Lee
%A J.D Clarkson
%A H.S Choe
%A S Tongay
%A Ramamoorthy Ramesh
%A J Wu
%B Advanced Materials
%D 2016
%G eng
%I Wiley-VCH Verlag
%P 2923-2930
%R 10.1002/adma.201504779
%T Ferroelectrically gated atomically thin transition-metal dichalcogenides as nonvolatile memory
%V 28
%X Ferroelectrically driven nonvolatile memory is demonstrated by interfacing 2D semiconductors and ferroelectric thin films, exhibiting superior memory performance comparable to existing thin-film ferroelectric field-effect transistors. An optical memory effect is also observed with large modulation of photoluminescence tuned by the ferroelectric gating, potentially finding applications in optoelectronics and valleytronics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.