Process integration of PZT thin films with oxide electrodes for high density nonvolatile memories

Publication Type	Journal Article

Author	Ramamoorthy Ramesh
DOI	10.1080/10584589808238768
Notes	cited By 0
Journal	Integrated Ferroelectrics
Volume	20
Year of Publication	1998
Number	1-4
Pagination	69
Publisher	Taylor and Francis Inc.
ISSN Number	10584587
Keywords	Thin films Perovskite Lanthanum compounds Polarization Ferroelectric materials Non-volatile storage Capacitors Thermal effects Dielectric films Process integration
Organizations	No Organization
Research Areas	Ramesh Lab
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