TY - JOUR
KW - Microstructure
KW - Sputter deposition
KW - Laser ablation
KW - Electrodes
KW - Polarization
KW - Ferroelectricity
KW - Heterojunctions
KW - Silicon wafers
KW - Ferroelectric thin films
KW - Non-volatile storage
KW - Capacitors
KW - Metallorganic chemical vapor deposition
KW - Non-volatile ferroelectric memories
AU - Ramamoorthy Ramesh
AU - S Aggarwal
AU - O Auciello
AB - We present in this article a review of the status of thin film ferroelectric materials for nonvolatile memories. Key materials issues relevant to the integration of these materials on Si wafers are discussed. The effect of film microstructure and electrode defect chemistry on the ferroelectric properties relevant to a high density nonvolatile memory technology are discussed. The second part of this review focuses on approaches to integrate these capacitor structures on a filled poly-Si plug which is a critical requirement for a high density memory technology. Finally, the use of novel surface probes to study and understand broadband polarization dynamics in ferroelectric thin films is also presented. © 2001 Published by Elsevier Science B.V.
BT - Materials Science and Engineering: R: Reports
DO - 10.1016/S0927-796X(00)00032-2
LA - eng
M1 - 6
N1 - cited By 243
N2 - We present in this article a review of the status of thin film ferroelectric materials for nonvolatile memories. Key materials issues relevant to the integration of these materials on Si wafers are discussed. The effect of film microstructure and electrode defect chemistry on the ferroelectric properties relevant to a high density nonvolatile memory technology are discussed. The second part of this review focuses on approaches to integrate these capacitor structures on a filled poly-Si plug which is a critical requirement for a high density memory technology. Finally, the use of novel surface probes to study and understand broadband polarization dynamics in ferroelectric thin films is also presented. © 2001 Published by Elsevier Science B.V.
PY - 2001
SP - 191
EP - 236
T2 - Materials Science and Engineering: R: Reports
TI - Science and technology of ferroelectric films and heterostructures for non-volatile ferroelectric memories
VL - 32
SN - 0927796X
ER -