TY - JOUR
KW - Thin films
KW - Ferroelectric materials
KW - Ferroelectricity
KW - Non-volatile memory
KW - Ferroelectric films
KW - Transition metals
KW - Ferroelectric thin films
KW - Field effect transistors
KW - Non-volatile storage
KW - Memory performance
KW - Optical memory effect
KW - Thin film ferroelectrics
KW - Transition metal dichalcogenides
AU - C Ko
AU - Y Lee
AU - Yimin Chen
AU - J Suh
AU - D Fu
AU - A Suslu
AU - Sang Hoon Lee
AU - J.D Clarkson
AU - H.S Choe
AU - S Tongay
AU - Ramamoorthy Ramesh
AU - J Wu
AB - Ferroelectrically driven nonvolatile memory is demonstrated by interfacing 2D semiconductors and ferroelectric thin films, exhibiting superior memory performance comparable to existing thin-film ferroelectric field-effect transistors. An optical memory effect is also observed with large modulation of photoluminescence tuned by the ferroelectric gating, potentially finding applications in optoelectronics and valleytronics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
BT - Advanced Materials
DO - 10.1002/adma.201504779
LA - eng
M1 - 15
N1 - cited By 51
N2 - Ferroelectrically driven nonvolatile memory is demonstrated by interfacing 2D semiconductors and ferroelectric thin films, exhibiting superior memory performance comparable to existing thin-film ferroelectric field-effect transistors. An optical memory effect is also observed with large modulation of photoluminescence tuned by the ferroelectric gating, potentially finding applications in optoelectronics and valleytronics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
PB - Wiley-VCH Verlag
PY - 2016
SP - 2923
EP - 2930
T2 - Advanced Materials
TI - Ferroelectrically gated atomically thin transition-metal dichalcogenides as nonvolatile memory
VL - 28
SN - 09359648
ER -