TY - JOUR
KW - Microstructure
KW - Thin films
KW - Sputter deposition
KW - Laser ablation
KW - Ferroelectric materials
KW - Random access storage
KW - Strontium compounds
KW - Heterojunctions
KW - Lead compounds
KW - Non-volatile storage
KW - Capacitors
KW - Lead zirconate titanate (PZT)
KW - Metallorganic vapor phase epitaxy
KW - Strontium bismuth tantalate
KW - Dielectric films
AU - O Auciello
AU - C.M Foster
AU - Ramamoorthy Ramesh
AB - Basic scientific and technological advances on ferroelectric thin films and heterostructures are discussed in relation to the work on nonvolatile ferroelectric random access memories (NVFRAMs) performed by different groups during the last seven years. A reasonable understanding of the synthesis and microstructureproperty relationships of ferroelectric thin films for NVFRAMs is demonstrated. Materials integration strategies developed to fabricate ferroelectric capacitors with practically no fatigue or imprint, long polarization retention, and low leakage current are discussed. These properties have been obtained using two ferroelectric materials, Pb(ZrxTi1-x)O3 (PZT) and SrBi2Ta2O9 (SBT), that are the main candidates for application to the first generation of commercial NVFRAMs. A discussion of current knowledge and future research directions is presented.
BT - Annual Review of Materials Science
DO - 10.1146/annurev.matsci.28.1.501
LA - eng
M1 - 1
N1 - cited By 66
N2 - Basic scientific and technological advances on ferroelectric thin films and heterostructures are discussed in relation to the work on nonvolatile ferroelectric random access memories (NVFRAMs) performed by different groups during the last seven years. A reasonable understanding of the synthesis and microstructureproperty relationships of ferroelectric thin films for NVFRAMs is demonstrated. Materials integration strategies developed to fabricate ferroelectric capacitors with practically no fatigue or imprint, long polarization retention, and low leakage current are discussed. These properties have been obtained using two ferroelectric materials, Pb(ZrxTi1-x)O3 (PZT) and SrBi2Ta2O9 (SBT), that are the main candidates for application to the first generation of commercial NVFRAMs. A discussion of current knowledge and future research directions is presented.
PB - Annual Reviews Inc.
PY - 1998
SP - 501
EP - 531
T2 - Annual Review of Materials Science
TI - Processing technologies for ferroelectric thin films and heterostructures
VL - 28
SN - 00846600
ER -